Patents by Inventor James J. Welch

James J. Welch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
    Patent number: 8241704
    Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
    Type: Grant
    Filed: April 19, 2011
    Date of Patent: August 14, 2012
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Bryan C. Hendrix, James J. Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum
  • Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
    Patent number: 8034407
    Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
    Type: Grant
    Filed: May 17, 2007
    Date of Patent: October 11, 2011
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Bryan C. Hendrix, James J. Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum
  • CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM
    Publication number: 20110195188
    Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
    Type: Application
    Filed: April 19, 2011
    Publication date: August 11, 2011
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Bryan C. Hendrix, James J. Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum
  • Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility
    Publication number: 20080134757
    Abstract: A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.
    Type: Application
    Filed: March 15, 2006
    Publication date: June 12, 2008
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ing-Shin Chen, Jeffrey W. Neuner, Frank Dimeo, Philip S.H. Chen, James J. Welch, Jeffrey F. Roeder
  • Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
    Patent number: 7285308
    Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
    Type: Grant
    Filed: March 18, 2004
    Date of Patent: October 23, 2007
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Bryan C. Hendrix, James J. Welch, Steven M. Bilodeau, Jeffrey F. Roeder, Chongying Xu, Thomas H. Baum