Patents by Inventor James J. White

James J. White has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12246154
    Abstract: Microarray applicator (10000) including a microarray carrier (8000), which is retained within a housing (2000) by virtue of microarray carrier (8100) being engaged withholder (2400). Microarray patch (8200) and flexible backing (8220) are positioned such that the central portion (8210) has microneedles (8211) protrude in the direction opposite from the bottom (7200) of plunger (7000). Plunger (7000) is in a first position, having first notch (7310) engaged with ridge (2320). After activation, wherein plunger (7000) is in a second position such that second notch (7320) is engaged with ridge (2320). Here, bottom (7200) of plunger (7000) extends below first major surface (2100) of housing (2000) and has ejected microarray patch (8200).
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: March 11, 2025
    Assignee: Kindeva Drug Delivery L.P.
    Inventors: David J. Wirtanen, Kevin L Puckett, James L. Schug, David J. White
  • Publication number: 20250043044
    Abstract: A process comprising (a) providing used tire feedstock; (b) gasifying the used tire feedstock to produce a gaseous stream, where the gaseous stream includes carbon monoxide, hydrogen, and carbon dioxide; (c) biosynthetically converting at least a portion of the carbon monoxide, hydrogen, and carbon dioxide within the gaseous stream to produce a first product stream; (d) converting at least a portion of the first product stream to a second product stream, where the second product stream includes acetaldehyde and hydrogen; (e) routing a portion of the hydrogen within the second product stream to said step of biosynthetically converting at least a portion of the carbon monoxide, hydrogen, and carbon dioxide within the gaseous stream; and (f) converting at least a portion acetaldehyde to butadiene monomer.
    Type: Application
    Filed: December 8, 2022
    Publication date: February 6, 2025
    Inventors: Robert W. WHITE, Michael R. HARTZELL, William S. NIAURA, Mark W. SMALE, Terrence E. HOGAN, James J. KUHEL, III
  • Publication number: 20200273039
    Abstract: Systems and methods for automated fraud-type identification and decisioning are disclosed. In one embodiment, a method may include: (1) receiving, from a fraud detection system, an identification of a fraudulent transaction with a merchant; (2) determining that the fraudulent transaction was conducted using a digital wallet; (3) determining that the fraudulent transaction is associated with a linked merchant account; (4) retrieving a transaction history with the merchant and determining that the fraudulent transaction is a result of merchant account take over by: (a) determining that the transaction history only includes valid transactions with the merchant prior to the fraudulent transaction; (b) determining that the transaction history includes only valid digital wallet transactions with the merchant prior to the fraudulent transaction; and (c) determining that the transaction history includes a digital wallet transaction. with the linked merchant account.
    Type: Application
    Filed: February 25, 2020
    Publication date: August 27, 2020
    Inventors: Sunil MATHUR, Dana E. RUST, Stanley A. SZWALBENEST, James J. WHITE, Craig M. MULLANEY, Michael SPILOTRO, Chad GOLDEN, Kyle GNAGY
  • Patent number: 4651408
    Abstract: In a process for manufacturing vertically integrated MOS devices and circuits, gate oxide and a gate are formed on a semiconductor substrate such as a silicon substrate. A layer of polysilicon is then deposited over the wafer, the polysilicon contacting the substrate silicon through a window in the gate oxide. The substrate silicon and the polysilicon are then laser melted and cooled under conditions that encourage crystal seeding from the substrate into the polysilicon over the gate. Subsequently, ions are implanted into the silicon substrate and the polysilicon to form source and drain regions. By introducing the source and drain dopants after melt associated seeding of the polysilicon, the risk of dopant diffusion into the device channel regions is avoided.
    Type: Grant
    Filed: May 17, 1984
    Date of Patent: March 24, 1987
    Assignee: Northern Telecom Limited
    Inventors: Thomas W. MacElwee, Iain D. Calder, James J. White