Abstract: An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.

Abstract: An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.

Abstract: An imager includes an array of imager cells coupled to a multi-mode controller. The multi-mode controller includes circuitry that implements several modes of operation, including a high-light mode, a low-light mode, and a Snap mode. The high-light mode provides charge accumulation in a photoreceptor potential well, a readout potential well, and a sense node potential well. The low-light mode provides charge accumulation in the photoreceptor potential well constrained by an integration potential well. The Snap mode of operation simultaneously transfers accumulated charge for a set of the imager cells to their sense nodes. In addition, the multi-mode controller may select one of a plurality of V+ integration voltages for setting up a selected charge capacity in one of the imager cells. Thus, the V+ integration voltage may be increased to provide charge capacity to address increased light levels.

Abstract: An imager includes an array of imager cells coupled to a multi-mode controller. The multi-mode controller includes circuitry that implements several modes of operation, including a high-light mode, a low-light mode, and a Snap mode. The high-light mode provides charge accumulation in a photoreceptor potential well, a readout potential well, and a sense node potential well. The low-light mode provides charge accumulation in the photoreceptor potential well constrained by an integration potential well. The Snap mode of operation simultaneously transfers accumulated charge for a set of the imager cells to their sense nodes. In addition, the multi-mode controller may select one of a plurality of V+ integration voltages for setting up a selected charge capacity in one of the imager cells. Thus, the V+ integration voltage may be increased to provide charge capacity to address increased light levels.

Abstract: An imager includes an array of imager cells coupled to a multi-mode controller. The multi-mode controller includes circuitry that implements several modes of operation, including a high-light mode, a low-light mode, and a Snap mode. The highlight mode provides charge accumulation in a photoreceptor potential well, a readout potential well, and a sense node potential well. The low-light mode provides charge accumulation in the photoreceptor potential well constrained by an integration potential well. The Snap mode of operation simultaneously transfers accumulated charge for a set of the imager cells to their sense nodes. In addition, the multi-mode controller may select one of a plurality of V+ integration voltages for setting up a selected charge capacity in one of the imager cells. Thus, the V+ integration voltage may be increased to provide charge capacity to address increased light levels.