Abstract: A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.

Abstract: In one embodiment, an air filtration system includes a first ventilation path connected between at least one external air supply and a clean room. The first ventilation path is configured to direct air from the at least one external air supply to the clean room. A second ventilation path is connected to the clean room. The second ventilation path is configured to recirculate air in the clean room. A third ventilation path, separate from the first path, is connected between the at least one external air supply and a tool environment disposed within the clean room. The third ventilation path includes an ultra-pure air filtration unit disposed between the outdoor air supply and the tool environment. The ultra-pure air filtration unit includes a compressor and a dryer.

Abstract: Methods and apparatus for detecting errors in real time in CMP processing. A method includes disposing a semiconductor wafer onto a wafer carrier in a tool for chemical mechanical polishing (“CMP”); positioning the wafer carrier so that a surface of the semiconductor wafer contacts a polishing pad mounted on a rotating platen; dispensing an abrasive slurry onto the rotating polishing pad while maintaining the surface of the semiconductor wafer in contact with the polishing pad to perform a CMP process on the semiconductor wafer; in real time, receiving signals from the CMP tool into a signal analyzer, the signals corresponding to vibration, acoustics, temperature, or pressure; and comparing the received signals from the CMP tool to expected received signals for normal processing by the CMP tool; outputting a result of the comparing. A CMP tool apparatus is disclosed.

Abstract: In one embodiment, an air filtration system includes a first ventilation path connected between at least one external air supply and a clean room. The first ventilation path is configured to direct air from the at least one external air supply to the clean room. A second ventilation path is connected to the clean room. The second ventilation path is configured to recirculate air in the clean room. A third ventilation path, separate from the first path, is connected between the at least one external air supply and a tool environment disposed within the clean room. The third ventilation path includes an ultra-pure air filtration unit disposed between the outdoor air supply and the tool environment. The ultra-pure air filtration unit includes a compressor and a dryer.