Patents by Inventor James K. Eu

James K. Eu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7008551
    Abstract: A method for forming optical devices on-planar substrates, as well as optical devices formed by the method are described. The method uses a linear injection APCVD process to form optical waveguide devices on planar substrates. The method is performed at approximately atmospheric pressure. According to the method, a wafer with a lower cladding layer already formed by either CVD or oxidation is placed on a conveyer, which may include a heating element. The heated wafer is transported underneath a linear injector such that the chemicals from the linear injector react on the wafer surface to form a core layer. After the core layer is formed, photoresist is spun on the surface of the wafer, and then standard lithography is used to pattern the optical devices. Next, reactive ion etching (RIE) is used to form waveguide lines. The remaining photoresist is then removed. An upper cladding layer is formed to substantially cover the core regions.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: March 7, 2006
    Assignee: Andevices, Inc.
    Inventors: C. Jacob Sun, James K. Eu
  • Publication number: 20040022490
    Abstract: A filter module that includes a filter, such as an AWG filter, and a semiconductor optical amplifier (SOA) is described. Additionally, a method of multiplexing and/or demultiplexing optical signals using the DWDM filter module is described. The filter and SOA can be integrated together either through compact packaging (with fiber and connectors), or through on-chip integration. The SOA can fully compensate for the insertion loss due to, for example, an AWG filter or plurality of AWG filters. Additionally, the polarization dependent loss of the composite module can be reduced by adjusting the polarization dependent gain of the SOA to compensate for the polarization dependent loss of the AWG filter.
    Type: Application
    Filed: July 18, 2003
    Publication date: February 5, 2004
    Inventors: James K. Eu, Tong-Ning Li, C. Jacob Sun
  • Publication number: 20030201243
    Abstract: A method for forming optical devices on-planar substrates, as well as optical devices formed by the method are described. The method uses a linear injection APCVD process to form optical waveguide devices on planar substrates. The method is performed at approximately atmospheric pressure. According to the method, a wafer with a lower cladding layer already formed by either CVD or oxidation is placed on a conveyer, which may include a heating element. The heated wafer is transported underneath a linear injector such that the chemicals from the linear injector react on the wafer surface to form a core layer. After the core layer is formed, photoresist is spun on the surface of the wafer, and then standard lithography is used to pattern the optical devices. Next, reactive ion etching (RIE) is used to form waveguide lines. The remaining photoresist is then removed. An upper cladding layer is formed to substantially cover the core regions.
    Type: Application
    Filed: April 30, 2003
    Publication date: October 30, 2003
    Inventors: C. Jacob Sun, James K. Eu
  • Publication number: 20020092824
    Abstract: A method for forming optical devices on planar substrates, as well as optical devices formed by the method are described. The method uses a linear injection APCVD process to form optical waveguide devices on planar substrates. The method is performed at approximately atmospheric pressure. According to the method, a wafer with a lower cladding layer already formed by either CVD or oxidation is placed on a conveyer, which may include a heating element. The heated wafer is transported underneath a linear injector such that the chemicals from the linear injector react on the wafer surface to form a core layer. After the core layer is formed, photoresist is spun on the surface of the wafer, and then standard lithography is used to pattern the optical devices. Next, reactive ion etching (RIE) is used to form waveguide lines. The remaining photoresist is then removed. An upper cladding layer is formed to substantially cover the core regions.
    Type: Application
    Filed: January 18, 2001
    Publication date: July 18, 2002
    Inventors: C. Jacob Sun, James K. Eu
  • Patent number: 6222656
    Abstract: An attenuator for use in a wavelength division multiplexer (WDM) uses an opaque knife-edge as a light attenuator. The attenuator is moved along a single axis for controllably blocking the light output of an optical fiber whose light output is to be attenuated. By selectively moving the edge of the attenuator in front of the optical fiber, the attenuator can block any amount of the light output. Multiple attenuators are incorporated in a WDM, each attenuator being used in a channel associated with a particular narrow band of wavelengths.
    Type: Grant
    Filed: March 18, 1998
    Date of Patent: April 24, 2001
    Assignee: Axon Photonics, Inc.
    Inventor: James K. Eu