Patents by Inventor James Kenyon Schaeffer

James Kenyon Schaeffer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming gate stack and structure thereof
    Patent number: 7691701
    Abstract: Embodiments of the present invention provide a method of forming gate stacks for field-effect-transistors.
    Type: Grant
    Filed: January 5, 2009
    Date of Patent: April 6, 2010
    Assignees: International Business Machines Corporation, Freescale Semiconductor, Inc.
    Inventors: Michael P. Belyansky, Siddarth A. Krishnan, Unoh Kwon, Naim Moumen, Ravikumar Ramachandran, James Kenyon Schaeffer, Richard Wise, Keith Kwong Hon Wong, Hongwen Yan
  • High K dielectric film
    Patent number: 6541280
    Abstract: A dielectric layer comprises lanthanum, aluminum and oxygen and is formed between two conductors or a conductor and substrate. In one embodiment, the dielectric layer is graded with respect to the lanthanum or aluminum. In another embodiment, an insulating layer is formed between the conductor or substrate and the dielectric layer. The dielectric layer can be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.
    Type: Grant
    Filed: March 20, 2001
    Date of Patent: April 1, 2003
    Assignee: Motorola, Inc.
    Inventors: Vidya S. Kaushik, Bich-yen Nguyen, Srinivas V. Pietambaram, James Kenyon Schaeffer, III
  • High K dielectric film and method for making
    Publication number: 20020137317
    Abstract: A dielectric layer comprises lanthanum, aluminum and oxygen and is formed between two conductors or a conductor and substrate. In one embodiment, the dielectric layer is graded with respect to the lanthanum or aluminum. In another embodiment, an insulating layer is formed between the conductor or substrate and the dielectric layer. The dielectric layer can be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.
    Type: Application
    Filed: March 20, 2001
    Publication date: September 26, 2002
    Inventors: Vidya S. Kaushik, Bich-Yen Nguyen, Srinivas V. Pietambaram, James Kenyon Schaeffer
  • Method for integrated pavement marking
    Publication number: 20010002229
    Abstract: Apparatus and methods are provided for filling a groove in a pavement with a groove filling grout. The present invention is particularly useful for forming long-lasting pavement markings, such as lane striping.
    Type: Application
    Filed: December 21, 2000
    Publication date: May 31, 2001
    Applicant: Interstate Highway Construction.
    Inventors: James Kenyon Schaeffer, Roger D. Randall, John L. Edwards, Brian D. Huffman, Jack L. Crosby, Paul Svaldi, Robert P. Hunsicker, Michael E. Urbas
  • Grout preparation and dispensing apparatus for integrated pavement marking
    Publication number: 20010001030
    Abstract: Apparatus and methods are provided for filling a groove in a pavement with a groove filling grout. The present invention is particularly useful for forming long-lasting pavement markings, such as lane striping.
    Type: Application
    Filed: December 21, 2000
    Publication date: May 10, 2001
    Applicant: Interstate Highway Construction
    Inventors: James Kenyon Schaeffer, Roger D. Randall, John L. Edwards, Brian D. Huffman, Jack L. Crosby, Paul Svaldi, Robert P. Hunsicker, Michael E. Urbas
  • Apparatus and method for integrated pavement marking
    Patent number: 6213680
    Abstract: Apparatus and methods are provided for filling a groove in a pavement with a groove filling grout. The present invention is used for forming pavement markings, such as lane striping.
    Type: Grant
    Filed: April 30, 1999
    Date of Patent: April 10, 2001
    Assignee: Interstate Highway Construction
    Inventors: James Kenyon Schaeffer, Roger D. Randall, John L. Edwards, Brian D. Huffman, Jack L. Crosby, Paul Svaldi