Patents by Inventor James Kolodzey

James Kolodzey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110024650
    Abstract: Terahertz emitting devices are disclosed. The terahertz emitting device comprises a wafer and a current source. The wafer includes silicon carbide and a dopant. In particular, the wafer may consist of 6H silicon carbide; a nitrogen dopant having a concentration of approximately 1018 cm?3; a boron dopant having a concentration of approximately 1016 cm?3; and an aluminum dopant having a concentration of approximately 1015 cm?3. The current source is electrically coupled to the wafer. The wafer emits radiation having a frequency between approximately 1 THz and 20 THz when driven by the current source.
    Type: Application
    Filed: June 9, 2010
    Publication date: February 3, 2011
    Applicant: UNIVERSITY OF DELAWARE
    Inventors: JAMES KOLODZEY, Matthew Coppinger, Guangchi Xuan, Pengcheng Lv
  • Patent number: 7386016
    Abstract: An electrically-pumped terahertz (THz) frequency radiation source (or detector), including an optical gain (or absorption) material with two electrodes electrically coupled to the optical gain material. The optical gain (or absorption) material is formed substantially of at least one group IV element and doped with at least one dopant, which has an intra-center transition frequency in a range of about 0.3 THz to 30 THz. Also, a method of manufacturing electrically-pumped THz frequency radiation sources (or detectors).
    Type: Grant
    Filed: April 7, 2004
    Date of Patent: June 10, 2008
    Assignee: University of Delaware
    Inventors: James Kolodzey, Samit Kumar Ray, Thomas N. Adam, Pengcheng Lv, Ralph Thomas Troeger, Miron S. Kagan, Irina N. Yassievich, Maxim A. Odnoblyudov
  • Patent number: 7382032
    Abstract: A terahertz (THz) frequency radiation source to emit radiation in a narrow wavelength band within a range of about 3 ?m to 3000 ?m. This source includes: a broad bandwidth emitter to generate a broad bandwidth emitted wavelength band within the wavelength range; a first planar waveguide optically coupled to the broad bandwidth emitter to transmit the broad bandwidth radiation; a disk resonator evanescently coupled to the first planar waveguide with a resonance wavelength band within the emitted wavelength band; and a second planar waveguide evanescently coupled to the disk resonator to transmit radiation in the narrow wavelength band. The emitted wavelength band has a bandwidth greater than or equal to about 0.01 times a mid-band wavelength. The resonance wavelength band has a resonance wavelength bandwidth of less than or equal to about 0.25 times the emitted bandwidth. The narrow wavelength band is substantially equal to the resonance wavelength band.
    Type: Grant
    Filed: April 11, 2006
    Date of Patent: June 3, 2008
    Assignee: University of Delaware
    Inventors: James Kolodzey, Thomas N. Adam, Dennis W. Prather
  • Publication number: 20060180762
    Abstract: A terahertz (THz) frequency radiation source to emit radiation in a narrow wavelength band within a range of about 3 ?m to 3000 ?m. This source includes: a broad bandwidth emitter to generate a broad bandwidth emitted wavelength band within the wavelength range; a first planar waveguide optically coupled to the broad bandwidth emitter to transmit the broad bandwidth radiation; a disk resonator evanescently coupled to the first planar waveguide with a resonance wavelength band within the emitted wavelength band; and a second planar waveguide evanescently coupled to the disk resonator to transmit radiation in the narrow wavelength band. The emitted wavelength band has a bandwidth greater than or equal to about 0.01 times a mid-band wavelength. The resonance wavelength band has a resonance wavelength bandwidth of less than or equal to about 0.25 times the emitted bandwidth. The narrow wavelength band is substantially equal to the resonance wavelength band.
    Type: Application
    Filed: April 11, 2006
    Publication date: August 17, 2006
    Inventors: James Kolodzey, Thomas Adam, Dennis Prather
  • Patent number: 7057250
    Abstract: A terahertz (THz) frequency radiation source to emit radiation in a narrow wavelength band within a range of about 3 ?m to 3000 ?m. This source includes: a broad bandwidth emitter to generate a broad bandwidth emitted wavelength band within the wavelength range; a first planar waveguide optically coupled to the broad bandwidth emitter to transmit the broad bandwidth radiation; a disk resonator evanescently coupled to the first planar waveguide with a resonance wavelength band within the emitted wavelength band; and a second planar waveguide evanescently coupled to the disk resonator to transmit radiation in the narrow wavelength band. The emitted wavelength band has a bandwidth greater than or equal to about 0.01 times a mid-band wavelength. The resonance wavelength band has a resonance wavelength bandwidth of less than or equal to about 0.25 times the emitted bandwidth. The narrow wavelength band is substantially equal to the resonance wavelength band.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: June 6, 2006
    Assignee: University of Delaware
    Inventors: James Kolodzey, Thomas N. Adam, Dennis W. Prather
  • Publication number: 20040227089
    Abstract: A terahertz (THz) frequency radiation source to emit radiation in a narrow wavelength band within a range of about 3 &mgr;m to 3000 &mgr;m. This source includes: a broad bandwidth emitter to generate a broad bandwidth emitted wavelength band within the wavelength range; a first planar waveguide optically coupled to the broad bandwidth emitter to transmit the broad bandwidth radiation; a disk resonator evanescently coupled to the first planar waveguide with a resonance wavelength band within the emitted wavelength band; and a second planar waveguide evanescently coupled to the disk resonator to transmit radiation in the narrow wavelength band. The emitted wavelength band has a bandwidth greater than or equal to about 0.01 times a mid-band wavelength. The resonance wavelength band has a resonance wavelength bandwidth of less than or equal to about 0.25 times the emitted bandwidth. The narrow wavelength band is substantially equal to the resonance wavelength band.
    Type: Application
    Filed: April 8, 2004
    Publication date: November 18, 2004
    Inventors: James Kolodzey, Thomas N. Adam, Dennis W. Prather
  • Publication number: 20040228371
    Abstract: An electrically-pumped terahertz (THz) frequency radiation source (or detector), including an optical gain (or absorption) material with two electrodes electrically coupled to the optical gain material. The optical gain (or absorption) material is formed substantially of at least one group IV element and doped with at least one dopant, which has an intra-center transition frequency in a range of about 0.3 THz to 30 THz. Also, a method of manufacturing electrically-pumped THz frequency radiation sources (or detectors).
    Type: Application
    Filed: April 7, 2004
    Publication date: November 18, 2004
    Inventors: James Kolodzey, Samit Kumar Ray, Thomas N. Adam, Pengcheng Lv, Ralph Thomas Troeger, Miron S. Kagan, Irina N. Yassievich, Maxim A. Odnoblyudov
  • Patent number: 6593194
    Abstract: A method for making a metal-insulator-semiconductor field effect transistor (MISFET) having an oxidized aluminum nitride gate insulator formed on a silicon or gallium nitride substrate. The method of making the MISFET comprises the steps of depositing an aluminum nitride layer on the entire upper surface of the silicon or gallium nitride substrate. Subsequently, the aluminum nitride layer is oxidized to convert it into an oxidized aluminum nitride layer which acts as a gate insulator of the MISFET. Portions of the oxidized aluminum nitride layer are etched to form a plurality of openings that expose regions to become the source and drain regions of the substrate. The source and drain regions are formed in the plurality of openings by conventional techniques including diffusion and ion-implantation. Finally, a metal layer is formed in the plurality of openings of the oxidized aluminum nitride layer, wherein the metal layer contacts the source and drain regions of the substrate.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: July 15, 2003
    Assignee: University of Delaware
    Inventors: James Kolodzey, Johnson Olowolafe
  • Publication number: 20020098658
    Abstract: A method for making a metal-insulator-semiconductor field effect transistor (MISFET) having an oxidized aluminum nitride gate insulator formed on a silicon or gallium nitride substrate. The method of making the MISFET comprises the steps of depositing an aluminum nitride layer on the entire upper surface of the silicon or gallium nitride substrate. Subsequently, the aluminum nitride layer is oxidized to convert it into an oxidized aluminum nitride layer which acts as a gate insulator of the MISFET. Portions of the oxidized aluminum nitride layer are etched to form a plurality of openings that expose regions to become the source and drain regions of the substrate. The source and drain regions are formed in the plurality of openings by conventional techniques including diffusion and ion-implantation. Finally, a metal layer is formed in the plurality of openings of the oxidized aluminum nitride layer, wherein the metal layer contacts the source and drain regions of the substrate.
    Type: Application
    Filed: August 6, 2001
    Publication date: July 25, 2002
    Applicant: The University of Delaware
    Inventors: James Kolodzey, Johnson Olowolafe
  • Patent number: 6297538
    Abstract: A method for making a metal-insulator-semiconductor field effect transistor (MISFET) having an oxidized aluminum nitride gate insulator formed on a silicon or gallium nitride or other substrate. The method of making the MISFET comprises the steps of depositing an aluminum nitride layer on the entire upper surface of the silicon or gallium nitride or other substrate. Subsequently, the aluminum nitride layer is oxidized to convert it into an oxidized aluminum nitride layer which acts as a gate insulator of the MISFET. Portions of the oxidized aluminum nitride layer are etched to form a plurality of openings that expose regions to become the source and drain regions of the substrate. The source and drain regions are formed in the plurality of openings by conventional techniques including diffusion and ion-implantation. Finally, a metal layer is formed in the plurality of openings of the oxidized aluminum nitride layer, wherein the metal layer contacts the source and drain regions of the substrate.
    Type: Grant
    Filed: March 15, 1999
    Date of Patent: October 2, 2001
    Assignee: The University of Delaware
    Inventors: James Kolodzey, Johnson Olowolafe
  • Patent number: 5021841
    Abstract: The disclosed invention utilizes a homojunction tunneling mechanism of injection into the channel of a modulation doped field effect transistor. The onset of negative differential resistance can be controlled via the gate of the field effect transistor. In one embodiment there is homojunction tunneling within a bipolar field effect structure.
    Type: Grant
    Filed: October 14, 1988
    Date of Patent: June 4, 1991
    Assignee: University of Illinois
    Inventors: Jean-Pierre Leburton, James Kolodzey