Patents by Inventor James Kulman

James Kulman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vapor deposition of semiconductor material
    Patent number: 4698234
    Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
    Type: Grant
    Filed: October 17, 1986
    Date of Patent: October 6, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Subhendu Guha, Prem Nath, Chi C. Yang, Jeffrey Fournier, James Kulman
  • Gas mixtures for the vapor deposition of semiconductor material
    Patent number: 4696758
    Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
    Type: Grant
    Filed: October 6, 1986
    Date of Patent: September 29, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Subhendu Guha, Prem Nath, Chi Chung Yang, Jeffrey Fournier, James Kulman
  • Gas mixtures for the vapor deposition of semiconductor material
    Patent number: 4637895
    Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
    Type: Grant
    Filed: April 1, 1985
    Date of Patent: January 20, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Subhendu Guha, Prem Nath, Chi C. Yang, Jeffrey Fournier, James Kulman
  • Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material
    Patent number: 4609771
    Abstract: A p-doped microcrystalline silicon alloy material incorporated into a tandem photovoltaic device.
    Type: Grant
    Filed: February 13, 1985
    Date of Patent: September 2, 1986
    Assignee: Sovonics Solar Systems
    Inventors: Subhendu Guha, James Kulman
  • Fluorinated, p-doped microcrystalline silicon semiconductor alloy material
    Patent number: 4600801
    Abstract: A fluorinated, p-doped microcrystalline semiconductor alloy material; electronic devices incorporating said p-doped material; and the method for fabricating said p-doped material.
    Type: Grant
    Filed: November 2, 1984
    Date of Patent: July 15, 1986
    Assignee: Sovonics Solar Systems
    Inventors: Subhendu Guha, James Kulman