Abstract: In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.

Abstract: In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.

Abstract: In one embodiment, a method for forming a metallized ceramic includes thermal spraying metal directly onto a first side of a ceramic plate. The metal comprising aluminum. The method also includes densifying the thermally ceramic plate after spraying the metal onto the first side of the ceramic plate.

Abstract: In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.

Abstract: A temperature control device includes a thermoelectric device and a first sink. The thermoelectric device includes a plurality of thermoelectric elements electrically interconnected with one another by a plurality of electrical interconnects which are coupled between an interior surface of a first plate and an interior surface of a second plate. The first sink has a flat bottom and a plurality of generally parallel fins extending out of the flat bottom. Also, the flat bottom is coupled to an exterior surface of the first plate by a coupling media that includes a resilient and thermally-conductive pad.

Abstract: A temperature control device includes a thermoelectric device and a first sink. The thermoelectric device includes a plurality of thermoelectric elements electrically interconnected with one another by a plurality of electrical interconnects which are coupled between an interior surface of a first plate and an interior surface of a second plate. The first sink has a flat bottom and a plurality of generally parallel fins extending out of the flat bottom. Also, the flat bottom is coupled to an exterior surface of the first plate by a coupling media that includes a resilient and thermally-conductive pad.

Abstract: A thermoelectric module is provided that includes a first thermally conductive plate with a first array of thermoelectric elements coupled to it. The first array of thermoelectric elements includes a first plurality of thermoelectric elements. The thermoelectric module also includes a second thermally conductive plate coupled to the first array of thermoelectric elements, and a second array of thermoelectric elements coupled to the second plate. The second array of thermoelectric elements includes a second plurality of thermoelectric elements. A third thermally conductive plate is coupled to the second array of thermoelectric elements. The thermoelectric module also includes a portion of each thermoelectric element of the first and second pluralities of thermoelectric elements being coplanar with at least a portion of every other thermoelectric element of the first and second pluralities of thermoelectric elements.

Abstract: A method of forming a thermoelectric device includes extruding a P/N-type billet to form a P/N-type extrusion having a first plurality of P-type regions and a first plurality of N-type regions. The P/N-type extrusion is sliced into a plurality of P/N-type wafers. A diffusion barrier metallization is applied to at least a subset of the P-type regions and N-type regions. One side of at least one P/N-type wafer is attached to a temporary substrate. The P/N-type regions of the P/N-type wafer are separated into an array of isolated P-type and N-type elements. The array of elements are coupled to a first plate having a first patterned metallization to form a thermoelectric circuit. The temporary substrate and bonding media may be detached from the P-type and N-type elements. The thermoelectric circuit may be coupled with a second plate at a second end of the thermoelectric circuit, second plate having a second patterned metallization.

Abstract: A method of forming an P/N-type array of P-type and N-type material includes stacking a plurality of P-type material wafers and a plurality of N-type material wafers into a P/N-type array. At least one spacer is provided between adjacent wafers. The P-type material wafers and the N-type material wafers are boned together the into a composite P/N-type brick. The method may also include providing a second composite P/N-type brick. A plurality of channels and fingers are created in the first and second composite P/N-type bricks. The first and second composite P/N-type bricks are fit together to form a P/N-type mosaic. Alternatively, the method may include providing a single P/N-type brick. A plurality of channels is created in the composite P/N-type brick. The channels are then back filled with an electrically and thermally insulating adhesive so that a P/N-type grid of P-type elements and N-type elements is formed.

Abstract: A method of forming a thermoelectric device includes extruding a P/N-type billet to form a P/N-type extrusion having a first plurality of P-type regions and a first plurality of N-type regions. The P/N-type extrusion is sliced into a plurality of P/N-type wafers. A diffusion barrier metallization is applied to at least a subset of the P-type regions and N-type regions. One side of at least one P/N-type wafer is attached to a temporary substrate. The P/N-type regions of the P/N-type wafer are separated into an array of isolated P-type and N-type elements. The array of elements are coupled to a first plate having a first patterned metallization to form a thermoelectric circuit. The temporary substrate and bonding media may be detached from the P-type and N-type elements. The thermoelectric circuit may be coupled with a second plate at a second end of the thermoelectric circuit, second plate having a second patterned metallization.

Abstract: A liquid cooling system (10) includes a container (12) for storing a liquid (13) and a cooling element (14) disposed within the container (12) for cooling the liquid (13). The system (10) also includes a heat exchanging system (16) for cooling the cooling element (14) and a control device (38) disposed proximate the cooling element(14) for controlling solidification of the liquid (13) within the container (12). The control device (38) includes a first insulating region disposed between a portion of the cooling element (14) and a portion of the liquid (13). The first insulating region is formed from at least one thermally insulating material.

Abstract: A thermoelectric heat pump which is resistant against thermal stresses incurred during thermal cycling of Thermal Cyclers or the like between cold and hot temperatures of about 0.degree. C. at a ramping rate up to about 1.degree. C. per second has improved joints between the thermoelements and electrical conductors which have low electrical resistance and which substantially reduce fractures during thermal cycling. The joints include a tin-silver-indium solder containing by weight about 95% tin, 3.5% silver, and 1.5% indium, or a tin-silver-cadmium solder containing by weight about 95.5% tin, 3.5% silver, and 1.0% cadmium. A robust nickel diffusion barrier between the joints and thermoelectric elements ends provides additional improvement against joint fracture.

Abstract: An apparatus for generating cold and hot for application selectively by contact on an object having a paint or coating whose color changes in response to cold and hot temperatures. The apparatus is easy to hold and handle with one hand while holding an object for application, e.g., a doll or toy car, in the other hand. The apparatus includes a battery powered thermoelectric device having a cold sink shaped to form a cold applicator for cooling the paint sufficiently to change its color, and a heat sink shaped to form a heat applicator for changing back the color. For a doll, the cold sink applicator is used to change, for example, the natural color of the lips and cheeks to a make-up color, and a heat sink shaped to form a comb for combing the doll's hair and a heat applicator for returning the natural color of the doll's lips and cheeks through heat application.

Abstract: A heat dissipating device and method for dissipating waste heat produced by a solid state device, which includes (a) a solid state device and (b) a heat sink for dissipating waste heat produced by the solid state device which includes a base member being in thermal contact with the solid state device and a plurality of elongated heat conducting elements extending outwardly from the base member.

Abstract: A thermoelectric cooler device having thermoelectric elements of n and p type semiconductor material arranged in rows and columns between insulating substrates of alumina or beryllia, or ceramic materials having a known emissivity is coated with material(s) having an emissivity substantially lower than that of the thermoelectric cooler. The coating includes a layer of insulating material on at least a portion of the surfaces of the thermoelectric cooler, a layer of diffusion barrier forming material on the insulating layer, and a layer of low emissivity material on the diffusion barrier layer. For example, the insulating layer is silicon dioxide having a thickness of about 10,000 Angstroms, the diffusion barrier layer is titanium tungsten having a thickness of about 400-500 Angstroms, and the low emissivity layer is gold having a thickness of about 1,000 Angstroms.