Patents by Inventor James L. Cheever

James L. Cheever has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer level interconnection
    Patent number: 6633079
    Abstract: RF MicroElectroMechanical Systems (MEMS) circuitry (15) on a first high resistivity substrate (17) is combined with circuitry (11) on a second low resistivity substrate (13) by overlapping the first high resistivity substrate (17) and MEMS circuitry (15) with the low resistivity substrate (13) and circuitry (11) with the MEMS circuitry (15) facing the second circuitry (11). A dielectric lid (19) is placed over the MEMS circuitry (15) and between the first substrate (17) and second substrate (13) with an inert gas in a gap (21) over the MEMS circuitry (15). Interconnecting conductors (25,31,35,37,39,41) extend perpendicular and through the high resistivity substrate (17) and through the dielectric lid (19) to make electrical connection with the low resistivity substrate (13).
    Type: Grant
    Filed: September 10, 2002
    Date of Patent: October 14, 2003
    Assignee: Raytheon Company
    Inventors: James L. Cheever, Charles L. Goldsmith, John C. Ehmke, Billy D. Ables
  • Wafer level interconnection
    Publication number: 20030047799
    Abstract: RF MicroElectroMechanical Systems (MEMS) circuitry (15) on a first high resistivity substrate (17) is combined with circuitry (11) on a second low resistivity substrate (13) by overlapping the first high resistivity substrate (17) and MEMS circuitry (15) with the low resistivity substrate (13) and circuitry (11) with the MEMS circuitry (15) facing the second circuitry (11). A dielectric lid (19) is placed over the MEMS circuitry (15) and between the first substrate (17) and second substrate (13) with an inert gas in a gap (21) over the MEMS circuitry (15). Interconnecting conductors (25, 31, 35, 37, 39, 41) extend perpendicular and through the high resistivity substrate (17) and through the dielectric lid (19) to make electrical connection with the low resistivity substrate (13).
    Type: Application
    Filed: September 10, 2002
    Publication date: March 13, 2003
    Applicant: Raytheon Company
    Inventors: James L. Cheever, Charles L. Goldsmith, John C. Ehmke, Billy D. Ables
  • Water level interconnection
    Patent number: 6512300
    Abstract: RF MicroElectroMechanical Systems (MEMs) circuitry(15) on a first high resistivity substrate (17)is combined with circuitry (11) onsecond low-resisitivity substrate (13) by overlapping the first high resisitivity substrate (17)and MEMs circuitry (15) with the low resisitivity substrate(13) and circuitry (11) with the MEMs circuitry (15)facing the second circuitry (11). A dielectric lid (19) is placed over the MEMs circuitry (15)and between the first substrate (17)and second substrate (13)with an inert gas in a gap (21)over the MEMs circuitry (15). Interconnecting conductors (25,31,35,37,39,41) extend perpendicular and through the high resistivity substrate (17)and through the dielectric lid (19) to make electrical connection with the low resisitivity substrate (13).
    Type: Grant
    Filed: January 10, 2001
    Date of Patent: January 28, 2003
    Assignee: Raytheon Company
    Inventors: James L. Cheever, Charles L. Goldsmith, John C. Ehmke, Billy D. Ables
  • WAFER LEVEL INTERCONNECTION
    Publication number: 20030001251
    Abstract: RF MicroElectroMechanical Systems (MEMs) circuitry(15) on a first high resistivity substrate (17)is combined with circuitry (11) onsecond low-resisitivity substrate (13) by overlapping the first high resisitivity substrate (17)and MEMs circuitry (15) with the low resisitivity substrate(13) and circuitry (11) with the MEMs circuitry (15)facing the second circuitry (11). A dielectric lid (19) is placed over the MEMs circuitry (15)and between the first substrate (17)and second substrate (13)with an inert gas in a gap (21)over the MEMs circuitry (15). Interconnecting conductors (25,31,35,37,39,41) extend perpendicular and through the high resistivity substrate (17)and through the dielectric lid (19) to make electrical connection with the low resisitivity substrate (13).
    Type: Application
    Filed: January 10, 2001
    Publication date: January 2, 2003
    Inventors: James L. Cheever, Charles L. Goldsmith, John C. Ehmke, Billy D. Ables