Abstract: A method and system for programming vROM programmable memories using antifuses fabricated from undoped amorphous silicon as a high resistance link or layer between two metal layers. Whenever a programming voltage higher than a normal operating voltage is applied across the link between the two metal layers, the resistance of the link is reduced by transforming the insulating amorphous silicon into conducting polysilicon. This causes a closed or conductive link to be formed between the two metal layers. In the programming of the vROM, current is actively pumped to the link; and a current measurement or check is made prior to the application of the programming voltage to determine whether the link already has been programmed. Immediately following the application of the programming voltage, the current through the link again is checked to determine proper programming of the link.