Abstract: A method of making a narrow gate MESFET including the steps of placing a layered mask of nitride and polysilicon over a channel region for self-aligning in a substrate, oxidizing and then removing the polysilicon to reduce the remaining polysilicon width, etching the nitride to the polysilicon width, oxidizing the substrate where the nitride defines the gate therein, removing the nitride, and depositing metal on the gate to form the MESFET Schottky gate. Advantages of the improved MESFET include a relatively higher device gain, greater IC density, a self-aligned Schottky gate, controllable minimum series resistance, a relatively short channel using a conventional photo process, and a n- resistor that may be easily simultaneously fabricated therewith.

Abstract: A split gate VMOSFET having an enhancement transistor and a depletion load transistor on opposing sidewalls of a V-groove region. In the process, a differential oxidation rate due to the different crystal orientations of the substrate is used to complete device fabrication in a relatively simple manner. The resultant process steps make it possible to fabricate a VMOSFET having symmetrical geometry in which a transfer gate can be easily implemented.

Abstract: A split gate V groove FET device mounted in a substrate with a first terminal comprising a body of a first conductive material in the apex of said V groove, said first terminal connected to a first conductive channel in a first side of said V groove to form a first transistor and said first terminal connected to a second conductive channel in a second side of said V groove to form a second transistor.