Abstract: The present disclosure provides a detailed description of techniques for data model design collaboration using semantically correct collaborative objects. Certain embodiments comprise detecting various interaction events from designers collaborating on designing a virtual multidimensional data model to generate unit of work objects characterizing certain design transactions invoked by the interaction events. The unit of work objects are used to determine a set of committed modifications to the virtual multidimensional data model design for broadcasting to the collaborating designers. Some embodiments comprise unit of work objects based on various multidimensional data model rules, syntactic rules, semantic rules, and/or other criteria to determine valid committed modifications. Other embodiments comprise unit of work objects from multiple design transactions that are merged to determine the committed modifications.

Abstract: A snack and beverage container set is revealed. The snack and beverage container set includes a first container for receiving beverage therein, a second container mounted in the first container and used for mounting snacks, a first cover covered over the first and second containers and a second cover rotatably disposed over the first cover. The first cover includes a circular shade and a wide opening penetrating the circular shade. The second cover includes a circular shell and a wide opening penetrating the circular shell. A straw is passed through a vertical slot of the first cover into the inner space of the first container for users to drink beverage. The second cover is also rotated to make the wide opening of the second cover align with or move away from the wide opening of the first cover for taking snacks or closing the second container.

Abstract: The present disclosure provides a detailed description of techniques for data model design collaboration using semantically correct collaborative objects. Certain embodiments comprise detecting various interaction events from designers collaborating on designing a virtual multidimensional data model to generate unit of work objects characterizing certain design transactions invoked by the interaction events. The unit of work objects are used to determine a set of committed modifications to the virtual multidimensional data model design for broadcasting to the collaborating designers. Some embodiments comprise unit of work objects based on various multidimensional data model rules, syntactic rules, semantic rules, and/or other criteria to determine valid committed modifications. Other embodiments comprise unit of work objects from multiple design transactions that are merged to determine the committed modifications.

Abstract: A beverage container cap is revealed. The beverage container cap includes a cap body movably disposed on top of a beverage container, a waterproof gasket fixed on bottom of a valve seat with a chamber, and a pivot valve mounted in the chamber of the valve seat. A liquid through hole and at least one vent are arranged at the waterproof gasket. When a hemispherical pivot part of the pivot valve is pivotally rotated within the chamber of the valve seat to make the beverage container cap in a closed or open state, at least one lug on the hemispherical pivot part is pressed against or away from the vent of the waterproof gasket. Thereby pressure in the beverage container is equal to the pressure of the atmosphere outside while beverage in the container flows out. Thus users can drink the beverage from the container smoothly.

Abstract: A data bus can supply power from a first power source to a sink device. The data bus is coupled to a second power source. An electrical current from the second power source supplements an electrical current on the data bus if the voltage on the data bus decreases to less than a threshold value.

Abstract: A data bus can supply power from a first power source to a sink device. The data bus is coupled to a second power source. An electrical current from the second power source supplements an electrical current on the data bus if the voltage on the data bus decreases to less than a threshold value.

Abstract: The disclosure is related to detecting an electrostatic charge at a data storage device. The electrostatic charge can be detected and a data integrity management process can be implemented. In a particular embodiment, a method includes monitoring an electronic device having a data storage medium for an electrostatic event. The method also includes selectively performing a data integrity management process on the data storage medium when the electrostatic event is detected.

Abstract: The disclosure is related to detecting an electrostatic charge at a data storage device. The electrostatic charge can be detected and a data integrity management process can be implemented. In a particular embodiment, a method includes monitoring an electronic device having a data storage medium for an electrostatic event. The method also includes selectively performing a data integrity management process on the data storage medium when the electrostatic event is detected.

Abstract: A magnetic transistor includes a magnetic section, a thin semiconductor layer, a first metal terminal, a second metal terminal, and a third metal terminal. The thin semiconductor layer is disposed on the magnetic section. The first metal terminal is disposed on one end of the magnetic section, acting as a gate of the magnetic transistor and capable of providing a conductive channel in the thin semiconductor layer. The second metal terminal and the third metal terminal are disposed respectively on one end and the other end of the thin semiconductor layer, capable of creating a conductive region. While the magnetic transistor is turned on, a current path is formed between the second metal terminal and the third metal terminal via the thin semiconductor layer.

Abstract: A magnetic transistor includes a first magnetic section, a second magnetic section, a conductive section, a first metal terminal, and a second metal terminal. The conductive section is disposed between and is in direct contact with both the first and second magnetic section. The first metal terminal is disposed on one end of an opposite surface to the conductive section of the first magnetic section. The second metal terminal is disposed on one end approximately diagonal to the first metal terminal on an opposite surface to the conductive section of the second magnetic section. While the magnetic transistor structure is turned on, a current flows through the first magnetic section and the second magnetic section via the conductive section.

Abstract: A magnetic transistor circuit with the OR, NOR, NAND and AND functions has a first, a second, a third, a fourth magnetic transistor, and a routing line. These four magnetic transistors as ordinary transistors that can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The OR, NOR, NAND and AND logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: A magnetic transistor circuit with the AND, NAND, NOR and OR functions has a first, a second, a third, a fourth magnetic transistor, and a routing line. These four magnetic transistors as ordinary transistors that can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The AND, NAND, NOR and OR logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: A magnetic transistor circuit has a first and a second magnetic transistor. These two magnetic transistors that work as the ordinary transistors can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The EXOR logic function of the binary system can be implemented by the control of these metal devices.

Abstract: A magnetic transistor circuit representing the data ‘1’ and ‘0’ of the binary system comprises a routing line and a magnetic transistor unit. The routing line has a current going through with a first current direction or a second current direction, wherein the first current direction and the second current direction are opposite to represent the data ‘1’ and the data ‘0’ respectively. The magnetic transistor unit couples to the routing line at an output end to control the direction of the current going through the routing line.

Abstract: A magnetic AND/NOR circuit has a first, a second, a third, and a fourth magnetic transistor. These four magnetic transistors as ordinary transistors that can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The ‘AND’ and ‘NOR’ logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: A magnetic memory has a first, a second and a third magnetic transistor. The first magnetic transistor has a first magnetic section and a second magnetic section, wherein the first magnetic section couples to a high voltage end. The second magnetic transistor has a third magnetic section and a fourth magnetic section, wherein the third magnetic section couples to a low voltage end, and the fourth magnetic section couples to the second magnetic section of the first magnetic transistor. The third magnetic transistor has a fifth magnetic section and a sixth magnetic section, wherein the fifth magnetic section couples with the second magnetic section and the fourth magnetic section together, and the sixth magnetic section couples to an input/output end.

Abstract: The method for reducing word line currents in magnetoresistive random access memory (MRAM) includes disposing the MRAM bit between a pair of word lines according to a magnetic field strength is increased when a distance between a magnetic section and its corresponding word line is decreased.

Abstract: A magnetic OR/NAND circuit has a first, a second, a third, and a fourth magnetic transistor. These four magnetic transistors that work as the ordinary transistors can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The ‘OR’ and ‘NAND’ logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: A magnetic random access memory (MRAM) device includes sense lines, a selector, a reading circuit and a writing circuit. Each sense line is coupled to one or more MRAM cells. The selector is used to select one of the sense lines to allow a read or write operation. The reading circuit is coupled to the sense lines and provides a first sense current to the selected sense line during the read operation. The writing circuit is coupled to the sense lines and provides a second sense current to the selected sense line during the write operation.

Abstract: A variable timing system for a magnetoresistive random access memory circuit (MRAM IC) is embedded in an MRAM IC and includes a number of timing control circuits, where each timing control circuit generates a timing control signal. A number of variable timing circuits are each coupled to receive at least two of the timing control signals, and each of the number of timing circuits outputs a variable timing in response to the timing control signals. At least one MRAM timing driver is connected to receive the variable timing.