Abstract: Mobile device advertising chains are described herein. Presenting a primary offer, comprising a first action, is caused on a mobile computing device. The first action is caused on the mobile computing device. An end of the first action is detected. Presenting a purchase offer, comprising a purchase action, is caused on the mobile computing device after the end of the first action. Data indicating that the purchase action was completed in connection with the mobile computing device based on the purchase offer is received. A sum of the value to confer in connection with the device for accepting both the primary offer and the purchase offer is determined. The sum of the values may be used in optimizing subsequent presentations of the primary offer to other mobile devices.

Abstract: Mobile device advertising chains are described herein. Presenting a primary offer, comprising a first action, is caused on a mobile computing device. The first action is caused on the mobile computing device. An end of the first action is detected. Presenting a purchase offer, comprising a purchase action, is caused on the mobile computing device after the end of the first action. Data indicating that the purchase action was completed in connection with the mobile computing device based on the purchase offer is received. A sum of the value to confer in connection with the device for accepting both the primary offer and the purchase offer is determined. The sum of the values may be used in optimizing subsequent presentations of the primary offer to other mobile devices.

Abstract: An infrared temperature sensing device is provided for sensing temperature of a target object. The sensing device includes a semiconductor substrate, a thermopile infrared sensor mounted to the substrate for sensing temperature of a remote target object, and temperature sensing circuitry mounted to the substrate. The temperature sensing circuitry generates a temperature dependent signal substantially linearly related to ambient temperature of the substrate. The sensing device further includes summing circuitry for generating a signal indicative of infrared sensed temperature as a function of the ambient temperature.

Abstract: A method and apparatus for evaluating the functionality and sensitivity of an infrared sensor to infrared radiation. The method and apparatus are adapted for testing an infrared sensor having a diaphragm containing a heating element and a transducer that generates an output responsive to temperature. The method entails placing the infrared sensor in a controlled environment, and then exposing the diaphragm of the sensor to different levels of thermal radiation so as to obtain outputs of the transducer at different output levels. In the absence of exposure of the diaphragm to thermal radiation, flowing current through the heating element at different input levels so that the output of the transducer returns to the different output levels obtained using thermal radiation, the input difference between the input levels can be computed and used to assess the functionality and the sensitivity of the sensor.

Abstract: A method of processing a wafer, and particularly a cap wafer configured for mating with a device wafer in the production of a die package. Masking layers are deposited on oxide layers present on opposite surfaces of the wafer, after which the masking layers are etched to expose regions of the underlying oxide layers. Thereafter, an oxide mask is formed on the exposed regions of the oxide layers, but is prevented from forming on other regions of the oxide layers masked by the masking layers. The masking layers are then removed and the underlying regions of the oxide layers and the wafer are etched to simultaneously produce through-holes and recesses in the wafer. The oxide mask is then removed to allow mating of the cap wafer with a device wafer.

Abstract: An infrared sensor including an absorber for absorbing incident infrared power to produce a signal representing the temperature of a target object, a frame supporting a membrane which carries the absorber, the frame including a plurality of reflecting surfaces disposed about the circumference of an opening over which the membrane spans for reflecting incident infrared power toward the absorber. By concentrating incident infrared power through reflection, the temperature difference between the absorber and the surrounding frame is increased, thereby producing an increased electrical output from the sensor.

Abstract: A process using integrated sensor technology in which a micromachined sensing element and signal processing circuit are combined on a single semiconductor substrate to form, for example, an infrared sensor. The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm, after the circuit fabrication process is completed. The process generally entails forming a circuit device on a substrate by processing steps that include forming multiple dielectric layers and at least one conductive layer on the substrate. The dielectric layers comprise an oxide layer on a surface of the substrate and at least two dielectric layers that are in tension, with the conductive layer being located between the two dielectric layers. The surface of the substrate is then dry etched to form a cavity and delineate the diaphragm and a frame surrounding the diaphragm.

Abstract: An optical sensor package with a substrate that supports a membrane carrying an optical sensor and through which radiation passes to impinge the sensor. The substrate has a first surface in which a cavity is defined, a second surface opposite the first surface, and a wall between the cavity and the second surface. The optical sensor is supported on the membrane, which is bonded to the substrate and spans the cavity in the substrate. A window is defined at the second surface of the substrate for enabling infrared radiation to pass through the wall of the substrate to the optical sensor.

Abstract: A thermocouple structure capable of providing a more compact thermopile-based thermal sensor. The thermocouple structure has a stacked configuration that includes a plurality of first conductors on a surface, a dielectric layer on each of the first conductors, and a plurality of second conductors on the dielectric layer and formed of a different material than the first conductors. Each first conductor has first and second ends, and each second conductor has a first end overlying and contacting the first end of one of the first conductors, and a second end overlying but separated from the second end of the first conductor by the dielectric layer. A plurality of third conductors electrically interconnect one of the second ends of the second conductors with one of the second ends of the first conductors. Each third conductors is thicker than the second conductors to promote the robustness of the connection.