Abstract: A method is provided for cleaning resin residue in liquid crystal display (LCD) or integrated circuit (IC) fabrication process. The method comprises: forming an electrode layer; forming an interlayer film of resin overlying the electrode later; patterning the resin interlayer; forming a via to access the first area of the electrode layer; in response to forming the via, forming a resin residue overlying a first area of the electrode layer; introducing a gas mixture including ozone into water to create a moist ozone gas, where the gas mixture is approximately 10% ozone by molecular weight (wt %); wet ashing the resin residue overlying the first area of the electrode layer using the moist ozone gas; and, depositing a metal layer overlying the first area of the electrode to form a pixel electrode.

Abstract: A system and method have been provided for cleaning integrated circuit and liquid crystal display substrates of organic residue, such as photoresist, using a high concentrate ozonated water. Chilled water is used to increase the ozone concentration in the water to approximately 90 parts per million. The cleaning method is especially effective when used subsequent to an organic stripping process. The etching rates of the combined process are effective, and the use of the high concentrate ozonated water after the organic stripper also removes any contaminants on the substrate accumulated as a result of using the organic stripper.