Abstract: Integrated circuitry including at least one electrically erasable electrically programmable latch circuit. The contents of each latch circuit can be altered by applying programming voltages to the same terminals of the integrated circuitry that are used for other functions during times of normal operation. Each latch circuit provides localized memory for controlling the configuration of the integrated circuitry during times of normal operation, rather than depending upon memory external to the integrated circuitry for controlling the configuration of the integrated circuitry.

Abstract: The series connection between operating voltage terminals of the channels of field effect transistors with electrically alterable threshold voltage, programmed one for conduction and the other for non-conduction in response to programming voltage on their gate-to-gate connection, forms a programmable latch. A pair of such latches, or such a latch and a complementary-pair logic inverter, form a programmable complemented latch. The programmable complemented latch can be used to selectively enable a complementary-pair transmission gate, or to selectively enable a complementary-pair logic inverter, or to alternatively enable a transmission gate and a logic inverter. This last operation can be carried out, for example, in a modified Annis exclusive-OR gate configuration, for selectively inverting or not inverting a logic input.

Abstract: The network connections of the channels of complementary symmetry MOS FET's in a logic gate or array are altered electrically to program different logic responses to logic inputs. To this end, certain of the FET's are gate-injection or substrate-injection MOS FET's.

Abstract: A complementary MOS inverter includes transistors each of which has a dual gate structure with the threshold voltage of the channel nearest the drain of each transistor arranged to be lower than that of the channel nearest the source of each transistor. This arrangement provides the cascode characteristics of dual gate structure, i.e., high breakdown voltage, high voltage gain, low drain output conductance, and relatively fast frequency response, but allows all four gate electrodes of the transistors to be connected in common, thus enabling relatively simple layout.