Abstract: A semiconductor structure with dual isolation structures is disclosed. The semiconductor structure may include a protruding isolation structure in a pixel array region of a substrate and an embedded isolation structure in a peripheral device region of the same substrate. A region of the protruding isolation structure extends from an upper surface of the substrate, while another region of the protruding isolation structure may, optionally, be embedded within the substrate. The embedded isolation structure is formed within the substrate and includes an upper surface that is substantially coplanar with the upper surface of the substrate. A method of forming the semiconductor structure with dual isolation structure is also disclosed.

Abstract: A semiconductor structure with dual isolation structures is disclosed. The semiconductor structure may include a protruding isolation structure in a pixel array region of a substrate and an embedded isolation structure in a peripheral device region of the same substrate. A region of the protruding isolation structure extends from an upper surface of the substrate, while another region of the protruding isolation structure may, optionally, be embedded within the substrate. The embedded isolation structure is formed within the substrate and includes an upper surface that is substantially coplanar with the upper surface of the substrate. A method of forming the semiconductor structure with dual isolation structure is also disclosed.

Abstract: A compound having the structural formula ##STR1## wherein R.sup.1 is hydrogen, C.sub.1 -C.sub.6 alkyl, C.sub.2 -C.sub.6 carbalkoxyalkyl or phenyl substituted with C.sub.1 -C.sub.3 alkyl or halogen; R.sup.2 is hydrogen or C.sub.1 -C.sub.6 alkyl; and R.sup.3 and R.sup.4 are the same or different and are hydrogen, C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxy or halogen with the provisos that if R.sup.2, R.sup.3 and R.sup.4 are hydrogen, then R.sup.1 is not methyl, n-propyl or phenyl substituted with methyl in the ortho or para position; if R.sup.1, R.sup.2 and R.sup.3 are hydrogen then R.sup.4 is not hydrogen, methyl or methoxy; and if R.sup.1 and R.sup.2 are both n-propyl or n-butyl then R.sup.3 and R.sup.4 are not both hydrogen. These compounds demonstrate utility as hypolipidemic agents.

Abstract: A process for controlling hyperlipidemia in mammals is disclosed. In this process a hyperlipidemia controlling effective amount of a compound having structural formula: ##STR1## where R.sup.1 is hydrogen, oxo, C.sub.1 -C.sub.6 alkyl or C.sub.2 -C.sub.6 alkanoyl; R.sup.2 is hydrogen or oxo; and R.sup.3 is hydrogen, C.sub.1 -C.sub.6 alkyl, C.sub.2 -C.sub.6 alkanoyl, C.sub.2 -C.sub.6 carboxyalkyl, phenyl, benzyl or phenyl substituted with C.sub.1 -C.sub.6 alkyl, C.sub.2 -C.sub.6 alkanoyl, C.sub.1 -C.sub.6 alkoxy or halo is applied to mammals. A pharmaceutical composition comprising the above class of compounds having the meanings given herein and a pharmaceutical carrier therefor is also taught.

Abstract: The invention concerns cyclic imides, diones, reduced diones and analogs thereof which are useful as antihyperlipidemic agents to reduce serum cholesterol and trigylcerides.