Abstract: A horticultural lighting device for sustaining indoor plant growth, wherein said horticultural lighting device comprises lighting unit arranged for providing illumination in accordance with one of a plurality of modi, wherein, for each modus, said lighting unit is arranged for differentiating in different growth stages of a plant by illuminating in different electromagnetic spectrums, a power unit arranged for receiving an Alternating Current, AC, mains supply voltage and for providing power to said lighting unit, and a control unit arranged for detecting interruptions in said received AC mains supply voltage and for cycling through said plurality of modi for said lighting unit triggered by detected interruptions.

Abstract: A horticultural lighting device for sustaining indoor plant growth, wherein said horticultural lighting device comprises lighting unit arranged for providing illumination in accordance with one of a plurality of modi, wherein, for each modus, said lighting unit is arranged for differentiating in different growth stages of a plant by illuminating in different electromagnetic spectrums, a power unit arranged for receiving an Alternating Current, AC, mains supply voltage and for providing power to said lighting unit, and a control unit arranged for detecting interruptions in said received AC mains supply voltage and for cycling through said plurality of modi for said lighting unit triggered by detected interruptions.

Abstract: A device suppresses flicker and improves compatibility of a lamp including at least one solid state light source, the lamp being operably connected to a control circuit, such as a dimmer circuit. The device includes a connector enabling connection of the solid state light source to a lamp socket configured to receive an incandescent light source, and an adapter circuit connected in parallel with the at least one solid state light source when the solid state light source is connected to the socket via the connector. The adapter circuit provides a resistive path for current to pass through the lamp, during all or part of the AC mains cycle.

Abstract: A device suppresses flicker and improves compatibility of a lamp including at least one solid state light source, the lamp being operably connected to a control circuit, such as a dimmer circuit. The device includes a connector enabling connection of the solid state light source to a lamp socket configured to receive an incandescent light source, and an adapter circuit connected in parallel with the at least one solid state light source when the solid state light source is connected to the socket via the connector. The adapter circuit provides a resistive path for current to pass through the lamp, during all or part of the AC mains cycle.

Abstract: A lighting fixture (20-23) mechanically encloses a LED module (30), which includes at least one LED (40) and can further include a LED driver (50) in electrical communication with the LED(s) (40) to operably provide a LED drive signal to the at least one LED (40), a thermal management system (60) in thermal communication with the LED(s) (40) and the lighting fixture (20-23) to facilitate a heat transfer from the LED(s) (40) to the lighting fixture (20-23), and/or a beam shaper (70) in optical communication with the LED(s) (40) to modify an illumination profile of a radiation beam emitted by the LED(s) (40).

Abstract: A lighting fixture (20-23) mechanically encloses a LED module (30), which includes at least one LED (40) and can further include a LED driver (50) in electrical communication with the LED(s) (40) to operably provide a LED drive signal to the at least one LED (40), a thermal management system (60) in thermal communication with the LED(s) (40) and the lighting fixture (20-23) to facilitate a heat transfer from the LED(s) (40) to the lighting fixture (20-23), and/or a beam shaper (70) in optical communication with the LED(s) (40) to modify an illumination profile of a radiation beam emitted by the LED(s) (40).

Abstract: An apparatus is directed to controlling a light source. The apparatus provides at least one light source that emits a light signal at a discrete frequency and a reference signal at the discrete frequency. The apparatus further includes a photodetector optically coupled to the light source and designed to receive the light signal. The apparatus additionally includes at least one lock-in system coupled to the photodetector and each light source that receives the light signal from the photodetector and receives the reference signal from the light source. Each lock-in system produces an intensity value of the light source based on the light signal and the reference signal. The lock-in system may include a frequency multiplier and a filter coupled to the frequency multiplier wherein the intensity value is the product of the light signal and the reference signal processed through the frequency multiplier, and filtered to remove non-dc portions.

Abstract: The present invention provides a method, system and structure for maintaining light characteristics from a multi-chip LED package. This may be done by selecting a desired light output and restricting light from a plurality of light emitting diodes in the multi-chip LED package. It may also be done by measuring the restricted light, comparing the measured output light to the desired light and by adjusting current to LEDs in the multi-chip LED package based on the measured light.

Abstract: The present invention provides a method, system and structure for maintaining light characteristics from a multi-chip LED package. This may be done by selecting a desired light output and restricting light from a plurality of light emitting diodes in the multi-chip LED package. It may also be done by measuring the restricted light, comparing the measured output light to the desired light and by adjusting current to LEDs in the multi-chip LED package based on the measured light.

Abstract: A white light is provided for backlighting a liquid crystal display by directing red green and blue light into the first end of a color mixing optical fiber, mixing the red green and blue light in the color mixing fiber to produce white light, and conducting the white light out of the second end of the color mixing fiber to the liquid crystal display. The color mixing optical fiber and sources for generating the red green and blue light may be located remotely from the liquid crystal display, and the white light produced in the color mixing optical fiber coupled to the liquid crystal display by coupling optical fibers, thus simplifying and facilitating construction and operation of the backlighting system, and allowing for more convenient removal of heat remotely from the liquid crystal display.

Abstract: A white light is provided for backlighting a liquid crystal display by directing red green and blue light into the first end of a color mixing optical fiber, mixing the red green and blue light in the color mixing fiber to produce white light, and conducting the white light out of the second end of the color mixing fiber to the liquid crystal display. The color mixing optical fiber and sources for generating the red green and blue light may be located remotely from the liquid crystal display, and the white light produced in the color mixing optical fiber coupled to the liquid crystal display by coupling optical fibers, thus simplifying and facilitating construction and operation of the backlighting system, and allowing for more convenient removal of heat remotely from the liquid crystal display.

Abstract: A method for repeatably fabricating GaAs/ZnSe and other III-V/II-VI semiconductor interfaces with relatively low stacking fault densities in II-VI semiconductor devices such as laser diodes. The method includes providing a molecular beam epitaxy (MBE) system including at least a group III element source, a group II element source, a group V element source and a group VI element source. A semiconductor substrate having a III-V semiconductor surface on which the interface is to be fabricated is positioned within the MBE system. The substrate is then heated to a temperature suitable for III-V semiconductor growth, and a crystalline III-V semiconductor buffer layer grown on the III-V surface of the substrate. The temperature of the semiconductor substrate is then adjusted to a temperature suitable for II-VI semiconductor growth, and a crystalline II-VI semiconductor buffer layer grown on the III-V buffer layer by alternating beam epitaxy.

Abstract: Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the compound by migration enhanced epitaxy (MEE). Growth of the remainder of the layer by MBE results in much lower defects than if the entire layer had been grown by MBE. Layers are useful in devices such as LEDs and injection lasers.

Abstract: A blue-green II/VI semiconductor injection laser utilizing a Zn.sub.1-u Cd.sub.u Se active layer (quantum well) having Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y cladding layers and ZnS.sub.z Se.sub.1-z guiding layers on a GaAs substrate. These devices are operable in a pulse mode at room temperature.