Abstract: Adjusting cell specific antenna configuration parameters includes receiving, at each of a plurality of radio access nodes in a network, measurement reports from a plurality of user equipment devices. Base incremental adjustments to configuration parameters of one or more antennas are performed at each radio access node in response to the measurement reports. Additional measurement reports are received from the plurality of user equipment devices after the incremental adjustments. Base incremental adjustments to the configuration parameters of the one or more antennas at the radio access nodes continue to be performed in response to the measurement reports after previous incremental adjustments until an improvement limit has occurred. Biased random adjustments to the configuration parameters of the one or more antennas at the radio access nodes are performed in response to the improvement limit until a desired optimum result is achieved.

Abstract: A method for determining cell states to adjust antenna configuration parameters includes receiving, at a radio access nodes in a network, measurement reports from a plurality of user equipment devices. The radio access node performs a weak coverage analysis in response to the measurement reports to determine whether a cell provided by the radio access node is assigned a good coverage state or a weak coverage state. The radio access node performs an overshooting analysis in response to the measurement reports to determine whether the cell provided by the radio access node is assigned an overshooter state or a non-overshooter state. The radio access node performs an interference analysis in response to the measurement reports to determine whether the cell provided by the radio access node is assigned an interferer state or a non-interferer state.

Abstract: An embodiment includes forming an isolation region between first and second active regions in a semiconductor, forming an opening between the first and second active regions by removing a portion of the isolation region, and forming a dielectric plug within the opening so that the dielectric plug is between the first and second active regions and so that a portion of the dielectric plug extends below upper surfaces of the first and second active regions. The dielectric plug may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.

Abstract: A method for determining cell states to adjust antenna configuration parameters includes receiving, at a radio access nodes in a network, measurement reports from a plurality of user equipment devices. The radio access node performs a weak coverage analysis in response to the measurement reports to determine whether a cell provided by the radio access node is assigned a good coverage state or a weak coverage state. The radio access node performs an overshooting analysis in response to the measurement reports to determine whether the cell provided by the radio access node is assigned an overshooter state or a non-overshooter state. The radio access node performs an interference analysis in response to the measurement reports to determine whether the cell provided by the radio access node is assigned an interferer state or a non-interferer state.

Abstract: Adjusting cell specific antenna configuration parameters includes receiving, at each of a plurality of radio access nodes in a network, measurement reports from a plurality of user equipment devices. Base incremental adjustments to configuration parameters of one or more antennas are performed at each radio access node in response to the measurement reports. Additional measurement reports are received from the plurality of user equipment devices after the incremental adjustments. Base incremental adjustments to the configuration parameters of the one or more antennas at the radio access nodes continue to be performed in response to the measurement reports after previous incremental adjustments until an improvement limit has occurred. Biased random adjustments to the configuration parameters of the one or more antennas at the radio access nodes are performed in response to the improvement limit until a desired optimum result is achieved.

Abstract: An expandable shelter having an expanded configuration and a collapsed configuration in which the shelter has the approximate dimensions of a standard International Organization for Standardization (ISO) freight container. The expandable shelter includes first and second substantially parallel corner posts disposed at a first end of the shelter. The expandable shelter also includes a ramp coupled with hinges at the first end of the shelter and is configured to fit securely on the interior of the first and second corner posts when in a closed configuration in which the ramp is disposed between the first and second corner posts. The expandable shelter has sufficient strength to withstand the forces of at least eight similar shelters stacked on top of the shelter.

Abstract: An embodiment includes forming an isolation region between first and second active regions in a semiconductor, forming an opening between the first and second active regions by removing a portion of the isolation region, and forming a dielectric plug within the opening so that the dielectric plug is between the first and second active regions and so that a portion of the dielectric plug extends below upper surfaces of the first and second active regions. The dielectric plug may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.

Abstract: Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.