Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

Abstract: A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first p

Abstract: A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.

Abstract: This invention relates to the production of resistant starch. Preferably, this invention relates to the production of resistant starch comprising selecting a reaction temperature, acidifying unmodified starch to a pH, wherein the pH is optimum to convert the unmodified starch to resistant starch when at the reaction temperature, heating the acidified unmodified starch to about the reaction temperature, and maintaining the acidified unmodified starch close to about the reaction temperature until the maximum yield of resistant starch has been obtained while maintaining a whiteness level between about 65 and about 100.

Abstract: The present invention relates to a method of starch production using continuous oxidation. This method allows for the starting material to contain variable amounts of non-starch products, which is common in large-scale processes. This method produces consistently oxidized starch products that exhibit a reduced tendency to form amylose crystals. Using this continuous reactor with multiple stages, it is possible to produce oxidized starch at any given viscosity.

Abstract: The present invention relates to a method of starch production using continuous oxidation. This method allows for the starting material to contain variable amounts of non-starch products, which is common in large-scale processes. This method produces consistently oxidized starch products that exhibit a reduced tendency to form amylose crystals. Using this continuous reactor with multiple stages, it is possible to produce oxidized starch at any given viscosity.

Abstract: The present invention fulfills, in an efficient, cost effective manner, the need for a starch which has a reduced tendency to form amylose crystals after cooking by providing a method using high levels of caustic materials during a reaction of oxidant with uncooked starch granules.