Abstract: An apparatus including a process chamber and a gas flow control system for depositing layers having uniform properties on substrates.

Abstract: An apparatus that is suitable for processing a workpiece. The apparatus is capable of raising, lowering, and rotating the workpiece as part of at least one of processing the workpiece, loading the workpiece into a process chamber, and unloading the workpiece from the process chamber.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material, such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate.

Abstract: A thermal processing system and method for processing a semiconductor substrate. A lamp system radiates through a window to heat the substrate. A dual gas manifold provides purge gas through a top showerhead to prevent deposits on the window and provides gas through a lower showerhead to deposit a material on the substrate. A thin support and a radiative cavity with thin radiation shields is used to support and insulate the substrate. A peripheral heater also heats the edges to enhance uniformity. An opaque quartz liner is used to reduce contaminants and undesired deposits and simplify cleaning.

Abstract: System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material, such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction.

Abstract: System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.

Abstract: A CVD reactor and method for growing semiconductor material upon a selected surface of a semiconductor wafer supported within the reactor includes a plurality of heat shields that are arranged relative to the peripheral edge and underside of the wafer to alter the radiation of flux from the wafer that is heated to elevated temperatures by a bank of high-intensity lamps that are oriented to illuminate the upper side of the wafer through a transparent wall of the reactor. A reactant gas flowing into the chamber from above the wafer is inhibited from flowing about the underside of the wafer, thereby assuring wafers that are not contaminated on the underside.

Abstract: An improved chemical reactor of the type for depositing a layer of material epitaxially onto a wafer of single crystalline silicon is disclosed. The reactor has a susceptor for supporting each wafer in a cavity of the susceptor with the cavity being curvilinearly shaped. Cavities of a particular shape and dimensions is particularly effective in reducing dislocations in the deposited epitaxial layer.

Abstract: A reduced pressure reaction chamber allows rotation of a workpiece, and translation of the workpiece along the axis of rotation, using a sealed rotate and translate actuator. The reaction chamber has rigid walls, and is particularly suited to reduced pressure systems. The actuator includes a shaft coupled through the wall of the chamber by a vacuum rotary feed-through mechanism. A sleeve is mounted over the shaft and coupled to the shaft by means of threads, and shaft seals, which provide a frictional coupling between the shaft and the sleeve. Due to the frictional coupling, the sleeve attains the same rotational velocity as the shaft. A clutch is provided, which engages the sleeve when linear translational motion is desired. The difference in rotational velocity of the shaft and the sleeve is translated into linear motion by the threads. The shaft seals, in addition to providing the frictional coupling, seal the actuator, and reduce contamination caused by such mechanism.

Abstract: A reflector apparatus with multiple reflecting facets for chemical vapor deposition reactors. For vertical and barrel reactors, the facets are annular and fit around the bell-jar shaped process enclosure. The facets may be adjusted by orienting or curving the reflecting facet surfaces so that the radiant energy from the reactor susceptor may be reflected back to the susceptor and wafers as desired for uniform heating of the processed semiconductor wafers.

Abstract: A vertical reactor for chemical vapor deposition having an H.sub.1 /D.sub.1 ratio in the range of 1.10 to 1.40, where H.sub.1 is the height of the reactor bell jar enclosure above the susceptor and D.sub.1 is the diameter of the susceptor. Reactor performance is further improved by extending the outermost coil of the induction coil heating the susceptor beyond the outer diameter of the susceptor and by extending the innermost coil of the induction coil within the inner diameter of the susceptor.