Patents by Inventor James Mitzlaff

James Mitzlaff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070178856
    Abstract: A supply voltage to a power amplifier is controlled. A signal at a single point in a power amplifier is detected. A signal parameter is determined for the detected signal. The signal parameter is compared to at least one predetermined limit. This comparison result is used to determine whether to adjust a supply voltage to the power amplifier. The signal parameter is, for example, an average power or a peak-to-average power ratio.
    Type: Application
    Filed: January 31, 2006
    Publication date: August 2, 2007
    Inventors: James Mitzlaff, Patrick Mathes, Rodney Hagen
  • Publication number: 20060091946
    Abstract: A circuit is provided, having a feed forward linear power amplifier configured with two or more error correction loops (225-235, 255-265). Each of the error correction loops includes a band pass filter (237, 257). Each of the band pass filters (237, 257) is tuned to a different frequency range. A controllable frequency oscillator (220) can be coupled to an input of the error correction loops. A controller sweeps the frequency of the controllable frequency oscillator over the frequency range corresponding to each of the band pass filters (237, 257).
    Type: Application
    Filed: October 29, 2004
    Publication date: May 4, 2006
    Inventor: James Mitzlaff
  • Publication number: 20050212602
    Abstract: Apparatus and methods are described for biasing amplifiers with multiple outputs. A semiconductor die may include a reference Field Effect Transistor (FET) integrated on the semiconductor die and coupled to an amplifier integrated on the semiconductor die. A voltage offset circuit may also be integrated on the semiconductor die for determining the voltage needed to operate the amplifier.
    Type: Application
    Filed: March 24, 2004
    Publication date: September 29, 2005
    Inventors: Enver Krvavac, James Mitzlaff, Mark Horn
  • Publication number: 20050037716
    Abstract: A radio frequency (RF) detector integrated circuit (IC) (40) includes a silicon substrate (42). Detector cells (44) having gallium arsenide (GaAs) RF detector diodes (D1, D2) and amplifier stages (48) having GaAs field effect transistor (GaAs FET) circuits are all formed on the single silicon substrate (42). The superior electron transport properties of GaAs results in a substantial increase in the upper RF input frequency limit of the RF detector IC (40). This makes the RF detector IC (40) suitable for systems requiring frequencies above 2.5 GHz.
    Type: Application
    Filed: August 12, 2003
    Publication date: February 17, 2005
    Inventor: James Mitzlaff