Patents by Inventor James Moreland

James Moreland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Film or layer of semiconducting material, and process for producing the film or layer
    Patent number: 7417297
    Abstract: SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ?20 nm in thickness, has an HF density of ?0.1/cm2, and a surface roughness of 0.2 nm RMS.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: August 26, 2008
    Assignee: Siltronic AG
    Inventors: Brian Murphy, Reinhold Wahlich, Rüdiger Schmolke, Wilfried Von Ammon, James Moreland
  • Film or layer of semiconducting material, and process for producing the film or layer
    Publication number: 20060202310
    Abstract: SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ? 20 nm in thickness, has an HF density of ? 0.1/cm2, and a surface roughness of 0.2 nm RMS.
    Type: Application
    Filed: March 20, 2006
    Publication date: September 14, 2006
    Applicant: Siltronic AG
    Inventors: Brian Murphy, Reinhold Wahlich, Rudiger Schmolke, Wilfried Von Ammon, James Moreland
  • Film or layer made of semi-conductive material and method for producing said film or layer
    Patent number: 7052948
    Abstract: The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: May 30, 2006
    Assignee: Siltronic AG
    Inventors: Brian Murphy, Reinhold Wahlich, Rüdiger Schmolke, Wilfried Von Ammon, James Moreland
  • Film or layer made of semi-conductive material and method for producing said film or layer
    Publication number: 20040142542
    Abstract: The invention relates to a film or a layer made of semiconducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.
    Type: Application
    Filed: December 18, 2003
    Publication date: July 22, 2004
    Inventors: Brian Murphy, Reinhold Wahlich, Rudiger Schmolke, Wilfried Von Ammon, James Moreland
  • Phone conversation tapping device for interconnection between a telephone and a recorder
    Patent number: D357684
    Type: Grant
    Filed: February 16, 1994
    Date of Patent: April 25, 1995
    Inventor: James Moreland