Abstract: A laser apparatus has a first mirror, a second mirror, at least a portion of which is defined by the first and second mirrors. The laser has an active region located in the laser cavity, which is capable of stimulated emission at one or more wavelengths of light. The second mirror comprises a plurality of dielectric layers arranged in parallel and having a reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the peak reflectivity. The laser apparatus may be a tunable laser apparatus in which the peak wavelength of the reflectivity band is adjusted, thereby adjusting the lasing wavelength of the laser. The reflectivity band may be a lasing threshold reflectivity band over which the reflectivity of the second mirror is greater than a lasing threshold reflectivity which is sufficient to permit lasing.

Abstract: A method is provided, the method comprising forming a first of n masking layers for a device and forming a first of n phase-shift layers for the device using the first of the n masking layers. The method also comprises forming a second of n masking layers for a device, and forming a second of n phase-shift layers for the device using the second of the n masking layers and forming at least n+1 and at most 2n different optical thicknesses for the device using the n masking layers and the n phase-shift layers.

Abstract: A device is provided, the device comprising a first vertical cavity surface-emitting laser (VCSEL) of a monolithic vertical cavity surface-emitting laser (VCSEL) array, the first vertical cavity surface-emitting laser (VCSEL) being tunable to a first plurality of wavelengths. The device also comprises a second vertical cavity surface-emitting laser (VCSEL) of the monolithic vertical cavity surface-emitting laser (VCSEL) array, the second vertical cavity surface-emitting laser (VCSEL) being tunable to a second plurality of wavelengths, wherein at least one wavelength is in both the first plurality of wavelengths and the second plurality of wavelengths.

Abstract: The present invention is directed to a method and system for conditioning the output signals of an array of surface-emitting lasers with an array of edge-receiving optical devices. Both the array of surface-emitting lasers and the array of edge-receiving optical devices are mounted on an optical bench substrate. The array of edge-receiving optical devices may also be monolithically fabricated on the optical bench substrate. The array of surface-emitting lasers and the array of edge-receiving optical devices are aligned by alignment features and slots, which are fabricated on the optical bench substrate so as to optically couple the array of surface-emitting lasers to the array of edge-receiving optical devices.

Abstract: Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface of a different phosphorus-containing III/V semiconductor material (e.g., InP) is facilitated by heating the non-planar surface in a substantially evacuated chamber to a mass-transport temperature, and exposing the surface to a flux of at least phosphorus form a solid phosphorus source. This mass-transport step is followed by in situ growth of the desired semiconductor material, with at least an initial portion of the growth being done at a first growth temperature that is not greater than the mass transport temperature. Growth typically is completed at a second growth temperature higher than the first growth temperature. A significant aspect of the method is provision of the required fluxes (e.g., phosphorus, arsenic, indium, gallium) from solid sources, resulting in hydrogen-free mass transport and growth, which can be carried out at lower temperatures than is customary in the prior art.

Abstract: In accordance with the invention, phosphorous vapor is provided by in situ conversion of red phosphorous to white phosphorous and permitting the flow of vapor from said white phosphorous. The conversion is effected in a low pressure cell having a high temperature region for evaporating red phosphorous and a low temperature region for condensing the resulting vapor into white phosphorous. At room temperature equilibrium, the vapor pressure is dominated by the white phosphorous.