Patents by Inventor James N. Dougan

James N. Dougan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a low K dielectric in a semiconductor manufacturing process
    Patent number: 6902440
    Abstract: A low K dielectric composite layer is formed of a low k barrier layer and a low K dielectric layer on the barrier layer. The barrier layer, which is deposited with the result of having a hydrophobic top surface, is treated with an oxygen plasma to convert the surface from hydrophobic to hydrophilic. A subsequent water-based clean is very effective in removing yield-reducing defects on the barrier layer due to the conversion of the surface of the barrier layer. After the water-based clean, the low K dielectric layer is formed on the surface of the barrier layer to achieve the composite layer that has a low K.
    Type: Grant
    Filed: October 21, 2003
    Date of Patent: June 7, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventors: James N. Dougan, Lesley A. Smith