Abstract: A thin-film of a high temperature superconducting compound having the formula M1-xCuO2-y, where M is Ca, Sr, or Ba, or combinations thereof, x is 0.05 to 0.3, and x>y. The thin film has a Tc (zero resistivity) of about 40 K. Also disclosed is a method of producing the superconducting thin film.

Abstract: An optical pulse propogating in an optical guide of an electro-optic medium interacts with a coplanar RF traveling wave to shift the optical wavelength. The RF phase is resynchronized to the optical pulse phase with spatial periodicity to provide a desired phase relationship between RF and optical radiation. A unidirectional incremental wavelength shifter comprises a frequency multiplexer for soliton communication and a symmetrical sideband modulator of this type varies the spectral width of probe illumination in an atomic absorption spectrometer probe beam.

Abstract: A thin film which is substantially free of measurable surface defects due to second-phase inclusions is disclosed. The film is composed of multilayered strata of a first metal oxide interspersed with single molecular layers of a second metal oxide, where the second metal oxide is effective to absorb second-phase defects which form in the first oxide layers.

Abstract: An optical pulse propogating in an optical guide of an electro-optic medium interacts with a coplanar RF traveling wave to shift the optical wavelength. The RF phase is resynchronized to the optical pulse phase with spatial periodicity to provide a desired phase relationship between RF and optical radiation. A unidirectional incremental wavelength shifter comprises a frequency multiplexer for soliton communication and a symmetrical sideband modulator of this type varies the spectral width of probe illumination in an atomic absorption spectrometer probe beam.

Abstract: A hysteretic high-T.sub.c trilayer Josephson junction, and a method of forming the same are disclosed. The junction includes lower and upper high T.sub.c superconducting cuprate films separated by a barrier layer, where the thin films each include a molecular junction layer adjacent the barrier layer which is characterized by a high-T.sub.c cuprate stoichiometry and crystal structure, and a flat two-dimensional surface, as evidenced by its electron diffraction pattern using reflected high-energy electron diffraction. The junction and barrier layers in the junction are formed by atomic layer-by-layer deposition.

Abstract: A new method for accurately and sequentially growing monolayers and creating new superlattice structures employing a MBE thermal source control technique employing a quasi-double beam atomic absorption background correction measurements with the beam blocked and with the beam unblocked and by calculating the concentration based on the: ##EQU1## and applying corrections for non-linear absorption curves because of comparable spectral bandwidth of the molecular beam.

Abstract: Compounds of the formula Bi.sub.1 Sr.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.

Abstract: A light source with appropriate optics focusses light on the wafer surface during deposition, while a nearby collector is biased to collect photoemitted electrons from the growing surface. A pico ammeter can be used to convert the small oscillatory current detected to a substantial voltage signal which can be recorded or processed by computer or other sutiable device. The light must contain wavelengths at energies close to or greater than the energy of the photoemission threshold. The detected photoemitted electron signal has an oscillatory component occurring due to the growth of epitaxial layers. This oscillation has frequency 1/.tau., where .tau. is the monolayer accumulation time.