Abstract: A trailer illumination assembly includes a trailer that has a plurality of running lights disposed on the trailer. The trailer includes a power source is positioned in the trailer and a female light plug which can be electrically coupled to a male light plug on a towing vehicle. The female light plug is in communication with the plurality of running light. An adapter plug is pluggable into the female light plug when the female light plug is not electrically coupled to the male light plug on the towing vehicle. Additionally, the adapter plug places the power source on the trailer in electrical communication with the plurality of running lights on the trailer. In this way the running lights on the trailer can be powered by the power source on the trailer.

Abstract: A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure.

Abstract: A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure.

Abstract: A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure.

Abstract: A method of preparing a low friction diamond surface comprises removing asperities from a surface of a polycrystalline diamond film disposed on a substrate, e.g., by removing not more than about 500 nm (e.g., not more than about 100 nm, 50 nm, 25 nm, or 10 nm) of diamond, on average, from the surface of the film. The removal step can be controlled to preserve depressions in the surface, which can provide useful properties, such as reservoirs for lubrication, which contribute to the low friction properties of diamond films prepared by the methods of the present invention. The diamond films of the invention preferably have an average grain size of about 2000 nm or less (e.g., less than or equal to about 1000 nm, 100 nm, 50 nm, 20 nm or 10 nm), and preferably include fewer than about 2000 asperities per square millimeter of diamond surface, or about 4/mm on a linear basis, as determined using a 2 ?m diameter profilometer stylus tip.

Abstract: A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure.