Abstract: A method of cleaning a deposition tool to control and minimize emission of environmentally deleterious materials includes the steps of: a) establishing a predetermined temperature in a processing chamber; b) providing a mixture of between 15 and 25 percent nitrogen trifluoride in helium at a mixture flow rate of more than 550 standard cubic centimeters per minute (sccm); c) establishing a high pressure of 1.5 to 9.5 torr in the processing chamber; d) establishing a plasma in the processing chamber, e) establishing a low pressure in the processing chamber of 2 torr or less; and f) establishing a plasma in the processing chamber. Instead of a two-step cleaning method, the method may alternatively be executed as a one-step cleaning method. Either method may be optimized by, among other things, providing 19% nitrogen trifluoride. The two-step method may also be optimized by providing a high pressure of about 7 to 9.5 torr and a low pressure of about 1.5 torr.