Patents by Inventor James Nulty

James Nulty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080110019
    Abstract: In one embodiment, a probe card for testing dice on a wafer includes a substrate, a number of cantilevers formed on a surface thereof, and a number of probes extending from unsupported ends of the cantilevers. The unsupported ends of the cantilevers project over cavities on the surface of the substrate. The probes have tips to contact pads on the dice under test. The probe card may include a compressive layer above the surface of the substrate with a number of holes through which the probes extend.
    Type: Application
    Filed: January 11, 2008
    Publication date: May 15, 2008
    Inventors: James Nulty, James Hunter, Alexander Herrera
  • Publication number: 20050212540
    Abstract: In one embodiment, a probe card for testing dice on a wafer includes a substrate, a number of cantilevers formed on a surface thereof, and a number of probes extending from unsupported ends of the cantilevers. The unsupported ends of the cantilevers project over cavities on the surface of the substrate. The probes have tips to contact pads on the dice under test. The probe card may include a compressive layer above the surface of the substrate with a number of holes through which the probes extend.
    Type: Application
    Filed: March 18, 2005
    Publication date: September 29, 2005
    Inventors: James Nulty, James Hunter, Alexander Herrera
  • Patent number: 6406640
    Abstract: The present invention relates to a method of plasma etching and a method of operating a plasma etching apparatus in which a concentration of oxygen at flash striking is greater than a concentration during etching.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: June 18, 2002
    Assignee: Cypress Semiconductor Corporation
    Inventors: Chan-lon Yang, Usha Raghuram, Kimberley A. Kaufman, Daniel Arnzen, James Nulty
  • Patent number: 6214743
    Abstract: According to one embodiment (100), a method of forming contacts may include forming structures that include sidewalls (102). A first insulating layer can be deposited (104). A second insulating layer can then be deposited over the first insulating layer (106). The second insulating layer can be patterned to form a hard etch mask (108). Contact holes can be etched through the second insulating layer using the hard etch mask as a contact hole etch mask (110). A second insulating layer can have a dielectric constant that is low with respect to other hard etch mask materials, such as silicon nitride. A hard etch mask formed from a second insulating layer can result in contact holes having lower aspect ratios than conventional approaches.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: April 10, 2001
    Assignee: Cypress Semiconductor Corporation
    Inventors: Jianmin Oiao, James Nulty
  • Patent number: 6165375
    Abstract: The present invention relates to a method of plasma etching and a method of operating a plasma etching apparatus.
    Type: Grant
    Filed: September 23, 1997
    Date of Patent: December 26, 2000
    Assignee: Cypress Semiconductor Corporation
    Inventors: Chan-lon Yang, Usha Raghuram, Kimberley A. Kaufman, Daniel Arnzen, James Nulty