Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract: Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.

Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Abstract: The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.

Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.

Abstract: Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. In one embodiment, an apparatus for monitoring a plasma in a substrate processing system is provided. The apparatus includes a plasma chamber having a plurality of walls, at least one of the plurality of walls having a dielectric ceiling, at least one inner coil element and at least one outer coil element disposed outside the chamber, a current sensor coupled to one of the inner coil element or the outer coil element, the current sensor adapted to detect current from an inductively coupled plasma generated in the plasma chamber, an RF power source, and one or more adjustable capacitors coupled to each of the one or more coil elements.

Abstract: An impedance match at an RF generator output of a plasma reactor includes plural minimum-seeking loop controllers having respective feedback input ports coupled to receive a reflected RF power signal from a reflected power sensing circuit and respective control output ports. The output ports are coupled to variable reactances of an impedance match circuit that is connected between the RF generator and an RF power applicator of the reactor.

Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H2) and oxygen (O2)—provided at a flow rate ratio of hydrogen (H2) to oxygen (O2) of up to about 3:1—or water vapor (H2O vapor); and generating an inductively coupled plasma in the ion generation region of the chamber to form a silicon oxide layer on the substrate.

Abstract: Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.

Abstract: A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H2) and oxygen (O2)—provided at a flow rate ratio of hydrogen (H2) to oxygen (O2) of up to about 3:1—or water vapor (H2O vapor); and generating an inductively coupled plasma in the ion generation region of the chamber to form a silicon oxide layer on the substrate.

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall.

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract: A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.

Abstract: A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber.

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.