Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

Abstract: A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.

Abstract: Microelectronic substrate processing systems include a microelectronic substrate processing chamber that is configured to contain therein at least one microelectronic substrate. A carbon dioxide supply system is configured to supply densified carbon dioxide to the microelectronic substrate processing chamber. A detergent supply system is configured to supply detergent to the microelectronic substrate processing chamber.

Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

Abstract: A method of utilizing a divided pressure vessel in a processing system employing a carbon dioxide based solvent includes transferring a first carbon dioxide based treating solution from a first liquid chamber in a divided pressure vessel having a plurality of liquid chambers to a processing vessel, returning the first treating solution from the processing vessel to the divided pressure vessel, transferring a second carbon dioxide based treating solution having a composition different from the first treating solution from a second liquid chamber in the divided pressure vessel to a processing vessel, and returning the second treating solution from the processing vessel to the divided pressure vessel. A divided pressure vessel may allow multiple solvent baths each having a different chemical composition to be stored and/or processed in a single pressure vessel while maintaining the different chemical compositions of the multiple solvent baths.

Abstract: Compositions useful for cleaning metal from a substrate or coating metal onto a substrate are described: Such compositions comprise (a) a densified carbon dioxide continuous phase; (b) a polar discrete phase in said carbon dioxide continuous phase; (c) a metal in said discrete phase (i.e., a metal removed from the substrate, or to be coated onto the substrate); (d) at least one ligand in said continuous phase, said discrete phase, or both said continuous and said discrete phase.

Abstract: A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), with the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.

Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

Abstract: Methods for cleaning a microelectronic substrate in a cluster tool are described that include placing the substrate in a pressure chamber of a module in a cluster tool; pressurizing the pressure chamber; introducing liquid CO2 into the pressure chamber; cleaning the substrate in the pressure chamber; removing the liquid CO2 from the pressure chamber, depressurizing the pressure chamber, and removing the substrate from the pressure chamber. Apparatus for processing a microelectronic substrate are also disclosed that that include a transfer module, a first processing module that employs liquid carbon dioxide as a cleaning fluid coupled to the transfer module, a second processing module coupled to the transfer module, and a transfer mechanism coupled to the transfer module. The transfer mechanism is configured to move the substrate between the first processing module and the second processing module.

Abstract: A method of utilizing a divided pressure vessel in a processing system employing a carbon dioxide based solvent includes transferring a first carbon dioxide based treating solution from a first liquid chamber in a divided pressure vessel having a plurality of liquid chambers to a processing vessel, returning the first treating solution from the processing vessel to the divided pressure vessel, transferring a second carbon dioxide based treating solution having a composition different from the first treating solution from a second liquid chamber in the divided pressure vessel to a processing vessel, and returning the second treating solution from the processing vessel to the divided pressure vessel. A divided pressure vessel may allow multiple solvent baths each having a different chemical composition to be stored and/or processed in a single pressure vessel while maintaining the different chemical compositions of the multiple solvent baths.

Abstract: A method for carrying out positive tone lithography with a carbon dioxide solvent system is carried out by (a) providing a substrate having a polymer resist layer formed thereon; (b) exposing at least one portion of the polymer resist layer to radiant energy to form at least one light field region in the polymer resist layer; and then (c) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system preferably comprising a polar group, under conditions in which the at least one light field region is preferentially removed.

Abstract: A method of utilizing a divided pressure vessel in a processing system employing a carbon dioxide based solvent includes transferring a first carbon dioxide based treating solution from a first liquid chamber in a divided pressure vessel having a plurality of liquid chambers to a processing vessel, returning the first treating solution from the processing vessel to the divided pressure vessel, transferring a second carbon dioxide based treating solution having a composition different from the first treating solution from a second liquid chamber in the divided pressure vessel to a processing vessel, and returning the second treating solution from the processing vessel to the divided pressure vessel. A divided pressure vessel may allow multiple solvent baths each having a different chemical composition to be stored and/or processed in a single pressure vessel while maintaining the different chemical compositions of the multiple solvent baths.

Abstract: Compositions useful for cleaning metal from a substrate or coating metal onto a substrate are described: Such compositions comprise (a) a densified carbon dioxide continuous phase; (b) a polar discrete phase in said carbon dioxide continuous phase; (c) a metal in said discrete phase (i.e., a metal removed from the substrate, or to be coated onto the substrate); (d) at least one ligand in said continuous phase, said discrete phase, or both said continuous and said discrete phase.

Abstract: A system for the controlled addition of detergent formulations and the like to a carbon dioxide cleaning apparatus comprises: (a) a high pressure wash vessel; (b) an auxiliary vessel; (c) a drain line connecting the auxiliary vessel to the wash vessel; (d) optionally but preferably, a separate vent line connecting the auxiliary vessel to the wash vessel; (e) a detergent reservoir; and (f) a detergent supply line connecting the detergent reservoir to the auxiliary vessel. An advantage of this apparatus is that, because the detergent formulation can be pumped into the auxiliary vessel in a predetermined aliquot or amount, which predetermined aliquot or amount can then be transferred into the wash vessel where it combines with the liquid carbon dioxide cleaning solution, the detergent formulation can be added to the cleaning solution in a more controlled or accurate manner.

Abstract: A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.

Abstract: A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), comprises the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.

Abstract: A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.

Abstract: A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.

Abstract: A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide drying composition, the cleaning composition comprising carbon dioxide, water, and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide cleaning composition; and then (d) removing the cleaning composition from the surface portion.

Abstract: A method of cleaning and removing solid particles during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the cleaning composition comprising carbon dioxide and a cleaning adjunct, the cleaning adjunct selected from the group consisting of cosolvents, surfactants, and combinations thereof; (c) immersing the surface portion in the densified carbon dioxide cleaning composition to remove solid particles from the surface portion; and then (d) removing the cleaning composition from the surface portion.