Abstract: An electronic device may have a display with an array of inorganic light-emitting diodes. The array of inorganic light-emitting diodes may be overlapped by a polarizer layer such as a circular polarizer. Alternatively, the display may be a polarizer-free display without any polarizer layer over the array of inorganic light-emitting diodes. Each inorganic light-emitting diode may be surrounded by a diffuser that redirects edge-emissions towards a viewer. A top diffuser, a color filter layer, a microlens, and/or a microlens with color filtering and/or diffusive properties may also optionally overlap each inorganic light-emitting diode. The inorganic light-emitting diodes may have reflective sidewalls to mitigate edge-emissions. In this type of arrangement, the array of inorganic light-emitting diodes may be coplanar with one or more opaque masking layers. To mitigate reflections, the display may include two opaque masking layers having differing properties or a single phase separated opaque masking layer.

Abstract: An electronic device may have a display with an array of inorganic light-emitting diodes. The array of inorganic light-emitting diodes may be overlapped by a polarizer layer such as a circular polarizer. Alternatively, the display may be a polarizer-free display without any polarizer layer over the array of inorganic light-emitting diodes. Each inorganic light-emitting diode may be surrounded by a diffuser that redirects edge-emissions towards a viewer. A top diffuser, a color filter layer, a microlens, and/or a microlens with color filtering and/or diffusive properties may also optionally overlap each inorganic light-emitting diode. The inorganic light-emitting diodes may have reflective sidewalls to mitigate edge-emissions. In this type of arrangement, the array of inorganic light-emitting diodes may be coplanar with one or more opaque masking layers. To mitigate reflections, the display may include two opaque masking layers having differing properties or a single phase separated opaque masking layer.

Abstract: An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.

Abstract: A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band to the valence band of the junction encourages tunneling across the junction. The tunneling is encouraged, because the dipole space charge bends the energy bands, and shortens a tunnel junction width charge carriers must traverse to tunnel across the junction. Placing impurities within or near the tunnel junction that may form deep states in the junction may also encourage tunneling in a tunnel junction. These states shorten the distance charge carriers must traverse across the tunnel junction.

Abstract: An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.

Abstract: An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.