Abstract: Disclosed are a motion-sensitive field effect transistor (MSFET), a motion detection system, and a method. The MSFET includes a gate structure with a reservoir containing conductive fluid and gate electrode(s). Given position(s) of the gate electrode(s) and a fill level of the fluid within the reservoir, contact between the gate electrode(s) and the fluid depends upon the orientation the MSFET channel region relative to the top surface of the conductive fluid and the orientation of the MSFET channel region relative to the top surface of the conductive fluid depends upon position in space and/or movement of the MSFET and, particularly, position in space and/or movement of the chip on which the MSFET is formed. An electrical property of the MSFET in response to specific bias conditions varies depending on whether or not or to what extent the gate electrode(s) contact the fluid and is, thus, measurable for sensing chip motion.

Abstract: An integrated circuit (IC) structure includes a plurality of cell rows with each cell row including a plurality of (standard) cells. A power rail for at least one pair of adjacent cell rows is asymmetric relative to a cell boundary between adjacent cells of the at least one pair of adjacent cell rows. Embodiments of the disclosure can also include the standard cell including a plurality of transistors at a device layer, and at least a portion of an isolation area at an edge of the device layer defining a cell boundary. The standard cell also includes the power rail including a first portion within the cell boundary and a second portion outside the cell boundary. The first portion and the second portion have different heights such that the power rail is asymmetric across the cell boundary. The asymmetric power rail provides seamless integration of cell libraries having different heights.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cross couple design for high density standard cells and methods of manufacture. The structure includes a first contact connected in a cross couple circuit to at least two gate structures, and a second contact connected to the first contact at a location which is devoid of any via connection.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to local interconnect power rails merged with upper power rails and methods of manufacture. The structure includes: an active cell including contacts enclosed in active regions; at least one local interconnect power rail connecting to the contacts of the active regions; and at least one power rail above and connected to the at least one local interconnect power rail.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a logic cell layout design for high density transistors and methods of manufacture. The structure includes a plurality of active gates in a high density transistor, and at least one dummy gate which is continuous and is adjacent to at least one active gate of the active gates in a multi-row cell of the high density transistor.

Abstract: Disclosed are a motion-sensitive field effect transistor (MSFET), a motion detection system, and a method. The MSFET includes a gate structure with a reservoir containing conductive fluid and gate electrode(s). Given position(s) of the gate electrode(s) and a fill level of the fluid within the reservoir, contact between the gate electrode(s) and the fluid depends upon the orientation the MSFET channel region relative to the top surface of the conductive fluid and the orientation of the MSFET channel region relative to the top surface of the conductive fluid depends upon position in space and/or movement of the MSFET and, particularly, position in space and/or movement of the chip on which the MSFET is formed. An electrical property of the MSFET in response to specific bias conditions varies depending on whether or not or to what extent the gate electrode(s) contact the fluid and is, thus, measurable for sensing chip motion.

Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.

Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.