Abstract: An apparatus for inspecting a substrate is described. The apparatus includes an X-Y stage that supports a substrate to be inspected and is operable to move a substrate supported thereby in X and Y directions; and an imaging system including a plurality of beam columns operable to irradiate regions of a substrate supported by the X-Y stage with beams of energy, respectively, discrete from one another. Respective ones of the beam columns are movable relative to others of the electron beam columns.

Abstract: An apparatus for inspecting a substrate is described. The apparatus includes an X-Y stage that supports a substrate to be inspected and is operable to move a substrate supported thereby in X and Y directions; and an imaging system including a plurality of beam columns operable to irradiate regions of a substrate supported by the X-Y stage with beams of energy, respectively, discrete from one another. Respective ones of the beam columns are movable relative to others of the electron beam columns.

Abstract: A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus that includes a scanning electron microscope, an x-ray detector, and an auxiliary acceleration voltage source. The scanning electron microscope includes a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy. The auxiliary acceleration voltage source is to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy. At the final beam energy, the electron beam is capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy.

Abstract: A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus that includes a scanning electron microscope, an x-ray detector, and an auxiliary acceleration voltage source. The scanning electron microscope includes a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy. The auxiliary acceleration voltage source is to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy. At the final beam energy, the electron beam is capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy.

Abstract: A scanning charge particle apparatus includes a layered charged particle beam column package; a sample holder; and a heater, such as a resistive heater, in one of the layers of the package that conductively heats layers and/or components.

Abstract: A scanning charged particle microscope includes a layered charged particle beam column package; a sample holder; and a layered micro-channel plate detector package located between the column package and the sample holder.

Abstract: A scanning charged particle apparatus includes a layered charged particle beam column package; a sample holder; and a layered differential pumping aperture that assists in maintaining two different vacuums.

Abstract: A scanning charged particle apparatus includes a layered charged particle beam column package; a sample holder; and a layered differential pumping aperture that assists in maintaining two different vacuums.

Abstract: A scanning charged particle microscope includes a layered charged particle beam column package; a sample holder; and a layered micro-channel plate detector package located between the column package and the sample holder.

Abstract: A scanning charge particle apparatus includes a layered charged particle beam column package; a sample holder; and a heater, such as a resistive heater, in one of the layers of the package that conductively heats layers and/or components.

Abstract: A MEMS device having a fixed element and a movable element wherein one or the other of the fixed element and the movable element has at least one radially-extended stop or overdeflection limiter. A fixed overlayer plate forms an aperture. The aperture is sized to minimize vignetting and may be beveled on the margin. Overdeflection limitation occurs during deflection before the movable element can impinge on an underlying electrode. The overdeflection limiter may be conveniently placed adjacent a gimbaled hinge.

Abstract: A MEMS device having a fixed element and a movable element wherein one or the other of the fixed element and the movable element has at least one radially-extended stop or overdeflection limiter. A fixed overlayer plate forms an aperture. The aperture is sized to minimize vignetting and may be beveled on the margin. Overdeflection limitation occurs during deflection before the movable element can impinge on an underlying electrode. The overdeflection limiter may be conveniently placed adjacent a gimbaled hinge.

Abstract: A MEMS device having a fixed element and a movable element wherein one or the other of the fixed element and the movable element has at least one radially-extended stop or overdeflection limiter. A fixed overlayer plate forms an aperture. The aperture is sized to minimize vignetting and may be beveled on the margin. Overdeflection limitation occurs during deflection before the movable element can impinge on an underlying electrode. The overdeflection limiter may be conveniently placed adjacent a gimbaled hinge.

Abstract: An electron multiplier having an access for allowing a beam to pass is presented. The electron multiplier collects particles traveling back along the beam and is capable of collecting the particles arbitrarily close to the beam. The electron multiplier includes at least two plates having secondary electron emitting surfaces, the at least two plates being separated by a small distance. The electron multiplier has a beam access through the at least two plates. Particles enter the electron multiplier in a direction opposite that of propagation of the beam and impact a secondary electron emitting surface, thereby being captured between the top plate and the bottom plate. In some embodiments of the invention, the electron multiplier is segmented so that azimuthal distributions of the particles can be determined. In some embodiments, the electron multiplier includes a stack of electron emitting surfaces arranged so that an angular distribution of the particles can be determined.

Abstract: Method for fabricating ultrathin gaps producing ultrashort standoffs in array structures includes sandwiching a patterned device layer between a silicon standoff layer and a silicon support layer, providing that the back surfaces of the respective silicon support layer and the standoff layer are polished to a desired thickness corresponding to the desired standoff height on one side and to at least a minimum height for mechanical strength on the opposing side, as well as to a desired smoothness. Standoffs and mechanical supports are then fabricated by etching to produce voids with the dielectric oxides on both sides of the device layer serving as suitable etch stops. Thereafter, the exposed portions of the oxide layers are removed to release the pattern, and a package layer is mated with the standoff voids to produce a finished device. The standoff layer can be fabricated to counteract curvature.

Abstract: Disclosed is a positioning stage for precisely positioning an object within a limited range of travel (e.g. 100 &mgr;m). By way of example, the stage can be used to position an electron source such as a field emitter in an electron beam microcolumn. The stage includes a block which defines a channel to allow flexure along a first axis. The block also defines another channel to allow flexure along a second axis perpendicular to the first axis. Using actuators in the channels to flex a portion of the block, the object supported by the block can be precisely positioned to a desired location in a horizontal plane defined by the first and second axes.

Abstract: A micrometer scale emitter tip or array is disclosed having precisely located tips and surrounding gates. A silicide on the tips reduces tip work function.

Abstract: Through a silicon fabrication process, an emitter tip array is produced by electron beam or other suitable submicrometer scale lithography for precise location of the emitters. The emitter tips are formed by an oxidation process which ensures accurate and precise formation of tips having uniform radii. The process also utilizes the oxidation step to precisely align gate electrode apertures with respect to corresponding emitter tips so that large arrays can be formed with great accuracy and reliability.