Abstract: A high speed BIFET junction field effect transistor is formed in an epitaxial layer of one conductivity type and includes source and drain regions of opposite conductivity type interconnected by a thin channel region of the opposite conductivity type. A thin surface layer of the one conductivity type is formed over the channel region, and a highly conductive contact is formed on the surface layer intermediate the source and drain regions. The surface contact can comprise highly doped polycrystalline silicon material with a metal layer on the surface thereof. The surface contact and the epitaxial layer underlying the channel region comprise gates for the field effect transistor. Increased speed of operation comes from the increased conductivity of the surface contact.

Abstract: A high speed BIFET junction field effect transistor is formed in an epitaxial layer of one conductivity type and includes source and drain regions of opposite conductivity type interconnected by a thin channel region of the opposite conductivity type. A thin surface layer of the one conductivity type is formed over the channel region, and a highly conductive contact is formed on the surface layer intermediate the source and drain regions. The surface contact can comprise highly doped polycrystalline silicon material with a metal layer on the surface thereof. The surface contact and the epitaxial layer underlying the channel region comprise gates for the field effect transistor. Increased speed of operation comes from the increased conductivity of the surface contact.