Abstract: According to some aspects, there is provided systems and methods for monitoring extraction of landfill gas from a landfill having a plurality of wells by using a communication system configured to transmit information using a low-power wide area networking (LPWAN) protocol, the communication system comprising one or more gateway devices including a first gateway device and a plurality of communication node devices including a first communication node device. Further, there is provided methods for configuring a communication system comprising one or more gateway devices including a first gateway device and multiple communication node devices including a first communication node device.

Abstract: Methods and apparatus for non-intrusive monitoring by sensing physical parameters such as electric and/or magnetic fields. Such apparatus and techniques may find application in a variety of fields, such as monitoring consumption of electricity, for example.

Abstract: A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.

Abstract: Methods and systems are disclosed for monitoring properties of building structures (e.g., monitoring the strength and humidity of concrete structures) using sensor devices embedded in the building structures. The sensor devices collect sensor data and wirelessly transmit the data to portable computer devices operated by users.

Abstract: A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.

Abstract: Methods and systems are disclosed for monitoring properties of building structures (e.g., monitoring the strength and humidity of concrete structures) using sensor devices embedded in the building structures. The sensor devices collect sensor data and wirelessly transmit the data to portable computer devices operated by users.

Abstract: A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.

Abstract: Methods and systems are disclosed for monitoring properties of building structures (e.g., monitoring the strength and humidity of concrete structures) using sensor devices embedded in the building structures. The sensor devices collect sensor data and wirelessly transmit the data to portable computer devices operated by users.

Abstract: Methods and apparatus for non-intrusive monitoring by sensing physical parameters such as electric and/or magnetic fields.

Abstract: Methods and apparatus for non-intrusive monitoring by sensing physical parameters such as electric and/or magnetic fields. Such apparatus and techniques may find application in a variety of fields, such as monitoring consumption of electricity, water, etc., in homes or businesses, for example, or industrial process monitoring.

Abstract: Methods and systems are disclosed for monitoring properties of building structures (e.g., monitoring the strength and humidity of concrete structures) using sensor devices embedded in the building structures. The sensor devices collect sensor data and wirelessly transmit the data to portable computer devices operated by users.

Abstract: A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.

Abstract: Methods and apparatus for non-intrusive monitoring by sensing physical parameters such as electric and/or magnetic fields. Such apparatus and techniques may find application in a variety of fields, such as monitoring consumption of electricity, water, etc., in homes or businesses, for example, or industrial process monitoring.