Patents by Inventor James Paul Fons
James Paul Fons has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9224460Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.Type: GrantFiled: June 21, 2013Date of Patent: December 29, 2015Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Junji Tominaga, James Paul Fons, Alexander Kolobov
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Patent number: 9153315Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 1015.Type: GrantFiled: June 21, 2013Date of Patent: October 6, 2015Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Junji Tominaga, James Paul Fons, Alexander Kolobov
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Publication number: 20130286725Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.Type: ApplicationFiled: June 21, 2013Publication date: October 31, 2013Inventors: Junji Tominaga, James Paul Fons, Alexander Kolobov
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Publication number: 20130279247Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 1015.Type: ApplicationFiled: June 21, 2013Publication date: October 24, 2013Inventors: Junji TOMINAGA, James Paul FONS, Alexander KOLOBOV
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Patent number: 8097323Abstract: An object of the invention is to write-once record and reproduce, or only reproduce, a mark smaller than the resolution limit; obtain a high level of reproduction performance (CNR and the like); and realize a high level of reproduction durability. In the invention, between a signal reproducing functional layer composed of Sb or Te and a protecting layer there is introduced a thermally stable diffusion preventing layer, and thereby reactions between the signal reproducing functional layer and the protecting layer due to increased temperature can be prevented or suppressed while increasing reproduction durability.Type: GrantFiled: August 17, 2007Date of Patent: January 17, 2012Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Takayuki Shima, Yuzo Yamakawa, James Paul Fons, Junji Tominaga
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Publication number: 20100207090Abstract: In one embodiment of the present invention, recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. The above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.Type: ApplicationFiled: June 13, 2008Publication date: August 19, 2010Inventors: Junji Tominaga, James Paul Fons, Alexander Kolobov
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Publication number: 20100200828Abstract: In one embodiment of the present invention, recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 1015.Type: ApplicationFiled: June 13, 2008Publication date: August 12, 2010Inventors: Junji Tominaga, James Paul Fons, Alexander Kolobov
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Publication number: 20090269542Abstract: An object of the invention is to write-once record and reproduce, or only reproduce, a mark smaller than the resolution limit; obtain a high level of reproduction performance (CNR and the like); and realize a high level of reproduction durability. In the invention, between a signal reproducing functional layer composed of Sb or Te and a protecting layer there is introduced a thermally stable diffusion preventing layer, and thereby reactions between the signal reproducing functional layer and the protecting layer due to increased temperature can be prevented or suppressed while increasing reproduction durability.Type: ApplicationFiled: August 17, 2007Publication date: October 29, 2009Inventors: Takayuki Shima, Yuzo Yamakawa, James Paul Fons, Junji Tominaga