Patents by Inventor James Philip Natwora, Jr.

James Philip Natwora, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LOW ZIRCONIUM, HAFNIUM-CONTAINING COMPOSITIONS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF
    Publication number: 20120029219
    Abstract: This invention relates to hafnium-containing compositions having a zirconium concentration of less than about 500 parts per million, a process for producing the hafnium-containing compositions, organometallic precursor compositions containing a hafnium-containing compound and having a zirconium concentration of less than about 500 parts per million, a process for producing the organometallic precursor compositions, and a method for producing a film or coating from the organometallic precursor compositions. The organometallic precursor compositions are useful in semiconductor applications as chemical vapor deposition (CVD) or atomic layer deposition (ALD) precursors for film depositions.
    Type: Application
    Filed: January 24, 2011
    Publication date: February 2, 2012
    Inventors: Scott Houston Meiere, James Philip Natwora, JR.
  • Process and apparatus for purifying hydrogen bromide
    Patent number: 6425265
    Abstract: A process for removing impurities such as oxygen, nitrogen, carbon monoxide, hydrogen, water (moisture), carbon dioxide, hydrogen chloride, methane and trace metals from crude hydrogen bromide and the apparatus for purifying such crude hydrogen bromide.
    Type: Grant
    Filed: September 26, 2001
    Date of Patent: July 30, 2002
    Assignee: Praxair Technology, Inc.
    Inventors: Arthur Edward Holmer, James Philip Natwora, Jr., Sateria Salim
  • Cryogenic system for producing ultra-high purity nitrogen
    Patent number: 5983667
    Abstract: A process for further purification of nitrogen gas, thereby producing ultra-high purity nitrogen which is substantially free of hydrogen, oxygen and carbon monoxide, wherein the nitrogen gas is contacted with a metal-containing adsorbent at a temperature of 150 K. or less.
    Type: Grant
    Filed: October 31, 1997
    Date of Patent: November 16, 1999
    Assignee: Praxair Technology, Inc.
    Inventors: Mary Louise Markowski, Thomas John Bergman, Jr., James Philip Natwora, Jr., John Keller Howell, David Richard Thompson