Abstract: An optical single sideband generation system comprising a RF signal generator generates a sawtooth drive voltage with a first frequency. A laser source provides the initial optical carrier with a second frequency that is modulated by a first phase modulator. The modulation shifts the optical carrier by the amount of the first frequency, and with added phase errors due to the imperfections of the sawtooth drive. A directional coupler allows the optical carrier to be divided into the error measurement path and the error correction path. The modulated signal goes to a phase detector that measures the phase error and converts the phase error signal to a baseband electrical signal. The optical signal at the output of the second phase modulator is the desired single sideband shifted from the original carrier with the phase errors of the signal generator suppressed by the error correction feedforward path.

Abstract: A two-dimensional quantum light emitting device includes a substrate, two or more monolayers, one or more positive electrodes, and one or more negative electrodes. The substrate grows two or more monolayers on a surface of the substrate. The two or more monolayers have a tunable bandgap ranging from about 477 nm to about 620 nm and have a tunable twist angle. The one or more positive electrodes and the one or more negative electrodes provide a current to an active region of the two or more monolayers and are interdigitated electrodes, non-interdigitated electrodes, piezoelectric electrodes, or a combination thereof that tune the twist angle of the two or more monolayers in-situ.

Abstract: An optoelectronic device is provided that includes a doped substrate, a tunneling barrier, a direct bandgap two dimensional semiconductor material, a hot electron emitter, a gate electrode, and a voltage bias. The hot electron emitter injects hot electrons from the underlying substrate into the conduction band of the direct bandgap two dimensional semiconductor material via quantum tunneling. The gate electrode is operable to provide the voltage bias in a direction normal to the X-Y plane of the direct bandgap two dimensional semiconductor material so as to generate an electric field perpendicular to the direct bandgap two dimensional semiconductor material. The voltage bias provided by the gate is operable to change an optical bandgap of the direct bandgap two dimensional semiconductor material continuously from the visible to the mid-infrared spectral regime via an electric dipole layer enhanced Giant Stark Effect for electrically-tunable hot electron luminescence applications.

Abstract: A device includes a substrate with a tunnel barrier disposed on active region defined on the substrate, a monolayer of graphene disposed on the tunnel barrier, a dielectric material disposed on the graphene, and an electrode disposed over a region of the dielectric material. A first voltage is applied across the electrode and the graphene to adjust a Fermi level within the graphene to a Fermi level position within the valence band of the graphene based upon a predetermined emission wavelength. A current is injected into the graphene's conduction band to cause the graphene to emit a broadband hot electron luminescence (HEL) spectrum of photons peaked at the predetermined emission wavelength. The device may be configured as a vertical-tunneling light-emitting hot-electron transistor. The broadband HEL photon emission spectrum emanating from the graphene may be voltage-tunable within the electromagnetic spectrum from UV to THz.

Abstract: An RF channelizer comprising: a master laser for generating a reference beam; a splitter for splitting the reference beam into first and second beams; first and second modulator modules for converting the first and second beams into first and second modulated beams; first and second seed tone generators for deriving first and second seed tones; first and second parametric mixers for converting the first and second seed tones into first and second combs; a signal modulator for modulating a received RF signal onto the first comb; first and second optical filters for separating the first and second combs into pluralities of first and second filtered beams with center frequencies corresponding to the second comb lines; and a coherent detection array for selecting, combining, and detecting corresponding pairs from first and second filtered beams providing at the output a contiguous bank of channelized signals covering the bandwidth of the RF signal.

Abstract: An integrated circuit includes a holographic recording material substantially filling a cavity in a semiconductor layer. During operation of the integrated circuit, a holographic pattern in the holographic recording is reconstructed and used to diffract an optical signal propagating in a plane of an optical waveguide, which is defined in the semiconductor layer out of the plane through the cavity. In this way, the holographic recording material may be used to couple the optical signal to an optical fiber or another integrated circuit.

Abstract: A method for forming planar-waveguide Bragg grating in a curved waveguide comprises: forming a long chirped planar-waveguide Bragg grating in an Archimedes' spiral such that a long length of the waveguide can fit in a small chip area where the grating is formed in the curved waveguide; using periodic width modulation to form the planar-waveguide Bragg grating on the curved waveguide, and where the formation of the periodic width modulation occurs during the etching of the waveguide core; using rectangular width modulation to create Bragg gratings with a higher order than 1st order to allow a larger grating period and larger modulation depth, using waveguide width tapering while keeping the width modulation period constant to introduce chirp to the planar-waveguide Bragg grating where the index of refraction is a function of waveguide width, by applying a specific width tapering to create a desired arbitrary chirp profile.

Abstract: An optical domain spectrum analyzer/channelizer employs multicasting of an analog signal onto a wavelength division multiplexing grid, followed by spectral slicing using a periodic optical domain filter. This technique allows for a large number of high resolution channels. Wideband, 100% duty cycle, spectrum analysis or channelization is made possible permitting continuous time wideband spectral monitoring. The instantaneous bandwidth of the spectrum analyzer/channelizer is equal to the full radio frequency bandwidth of the analyzer/channelizer.

Abstract: An integrated circuit includes a holographic recording material substantially filling a cavity in a semiconductor layer. During operation of the integrated circuit, a holographic pattern in the holographic recording is reconstructed and used to diffract an optical signal propagating in a plane of an optical waveguide, which is defined in the semiconductor layer out of the plane through the cavity. In this way, the holographic recording material may be used to couple the optical signal to an optical fiber or another integrated circuit.