Abstract: A non-volatile analog memory circuit includes charge depositing and storing ircuitry, voltage sensing circuitry, and closed-loop control circuitry. The charge depositing and storing circuitry includes a floating gate operable to receive charge deposited on it. The voltage sensing circuitry supplies an analog output in response to the sensed gate potential. The closed-loop control circuitry is used to control charge deposition. The control circuitry is operable to change the charge on the gate by directing electrical pulses of appropriate polarity to the charge depositing and storing circuitry. This is done to diminish the error between the analog output signal of the charge sensing circuitry and an analog input signal for providing a substantially accurate representation of the analog input signal.