Abstract: A culinary assembly with an interlocking bowl and base comprising a bowl formed in a hollow generally cylindrical configuration with an open top end and an enclosed, generally planar circular bottom end. The bottom end includes an upper surface and a lower surface. A stationary base is formed of a flat plate and a stationary tub. The plate is formed in a planar configuration with an upper surface and a lower surface. The upper surface includes an upwardly extending, generally cylindrically shaped tub. The tub has an open top section and a bottom section positioned on top of the upper surface of the plate. A locking mechanism securely couples the bowl in the operative orientation upon the base.

Abstract: A radiation detector includes a silicon substrate (12) having opposing first and second major surfaces, the substrate absorbing visible radiation incident upon the first major surface and passing into the substrate for generating charge carriers therefrom. The detector further includes a silicide layer (16) overlying the second major surface of the substrate, the silicide layer forming a Schottky-barrier junction with the underlying substrate. The silicide layer absorbs IR radiation for generating charge carriers therefrom. The substrate has a resistivity of approximately one thousand ohms per centimeter or greater for enhancing responsivity to visible radiation. A cavity structure (16) overlies the silicide layer and has a reflector (18) optically coupled thereto for reflecting IR radiation that passes through the silicide layer back to the silicide layer. To further enhance responsivity the substrate is thinned and has a thickness within a range of approximately 25 microns to approximately 125 microns.

Abstract: A high value, precision resistor (10) includes a doped region (18) having a boustrophedonic (folded or meandering) shape formed in a substrate (12). At least one section of the doped region (18) is formed by implantation using a focused ion beam. Where the entire doped region (18) is formed by the focused ion beam, the length thereof is selected to be large (10 to 100 times the width of the boustrophedonic shape) to maximize the accuracy of the resistor (10) by averaging over variations in grain size and implant dose. Alternatively, a probe resistor (32) and a plurality of similar unconnected doped sections (28) may be formed by means such as photolithography and flood ion implantation. The probe resistor (32) is measured at the desired operating temperature to determine the ratio of the measured resistance to the desired design resistance value.