Abstract: A method for the manufacture of a blisk drum is described. Disc forging for inertia welding together are provided with sacrificial material whose shape and position is selectively provided such that, on completion of the inertia welding process, integral blades can be fashioned from the sacrificial material. Other components such as buckets and balancing lands may also be provided from the sacrificial material.

Abstract: A method for the manufacture of a blisk drum is described. Disc forging for inertia welding together are provided with sacrificial material whose shape and position is selectively provided such that, on completion of the inertia welding process, integral blades can be fashioned from the sacrificial material. Other components such as buckets and balancing lands may also be provided from the sacrificial material.

Abstract: This invention provides protection from mosquitoes for an individual lying on a bed. An articulated frame supports mosquito netting over the exposed flesh of the individual. The articulated frame is easily deployed and retracted by the individual while lying on the bed. In the retracted position the bed is fully accessible for making-up or changing the bedding.

Abstract: An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx— or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Abstract: A structure and method for monitoring extrusion failures. The structure includes: a test wire having first and second ends; first and second vias contacting first and second ends of the test wire; a first monitor structure electrically isolated from the test wire and surrounding a periphery of the test wire; and a second monitor structure over the test wire, the second monitor structure electrically isolated from the test wire, the second monitor structure extending over at least the first end of the test wire.

Abstract: An interconnect structure and method of fabricating the same is provided. The interconnect structure is a highly reliable copper interconnect structure. The interconnect structure includes a planarized lower dielectric layer and a lower cap layer on the planarized lower dielectric layer. A copper material is formed in a trench of the planarized lower dielectric layer, below the lower cap layer. A lower liner extends into a pattern of the lower cap layer and contacts the copper layer. An upper dielectric layer is on the lower cap layer and a copper layer contacts the lower liner and is formed in a via of at least the lower cap layer. An upper liner is formed over the copper layer, sandwiching the copper layer between the lower liner and the upper liner. An upper copper layer is formed over the upper liner.

Abstract: A structure and method for monitoring extrusion failures. The structure includes: a test wire having first and second ends; first and second vias contacting first and second ends of the test wire; a first monitor structure electrically isolated from the test wire and surrounding a periphery of the test wire; and a second monitor structure over the test wire, the second monitor structure electrically isolated from the test wire, the second monitor structure extending over at least the first end of the test wire.

Abstract: An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx- or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Abstract: An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx- or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Abstract: An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx— or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Abstract: An orthopedic implant assembly comprising a stabilizing element, a securing element which attaches the stabilizing element to the bone, and a stopping member in the stabilizing element which inhibits the securing element from loosening or backing out of the bone. The stabilizing element has at least one bore with the stopping member therein. In one embodiment, the stopping member has a reversibly expandable inner and outer diameter to allow the securing element to pass posteriorly through the stopping member, but thereafter prevent or inhibit the securing element from anteriorly backing out of the posterior section of the transverse passageway.

Abstract: A method for causing an open circuit in an electrical conductor is provided, including the steps of: conducting a direct current through the conductor; and applying heat at a selected location on the conductor whereat it is desired to cause the open circuit of the conductor.

Abstract: Electromigration activity is decreased and lifetime is extended in solder stripes employed as conductors and terminals on microelectronic devices by forming an alloy of a solute element, such as copper, with tin in a lead/tin solder and providing a substantially uniform distribution of particles of the intermetallic compound in the solder. The concentration of the solute element is maintained at less than about three times the tin concentration and less than about 10% of the amount of the solder.

Abstract: A process for the preparation of a semiconductor device in a thin film of a monocrystalline semiconductor material supported on the surface of a substrate. In the process a thin film of a monocrystalline semiconductor material is formed on a substrate. The film of monocrystalline semiconductor material is doped at various depths with various types and concentrations of dopants. Thereafter, contacts are established at various depths of the doped thin film. In one embodiment, a thin film of a non-monocrystalline semiconductor material is deposited on a substrate. The thin film of non-monocrystalline semiconductor material is doped in situ as it is being deposited with various doping impurities to provide various types and concentrations of doping impurities at various depths. The thin film of non-monocrystalline semiconductor material has at least one tapered region terminating in a point. The thin film of non-monocrystalline semiconductor material is traversed with a particle beam.

Abstract: An orthopedic implant assembly comprising a stabilizing element, a securing element which attaches the stabilizing element to the bone, and a stopping member in the stabilizing element which inhibits the securing element from loosening or backing out of the bone. The stabilizing element has at least one bore with the stopping member therein. In one embodiment, the stopping member has a reversibly expandable inner and outer diameter to allow the securing element to pass posteriorly through the stopping member, but thereafter prevent or inhibit the securing element from anteriorly backing out of the posterior section of the transverse passageway.