Abstract: Disclosed herein are approaches for in-situ verification and correction of a wafer position. In one approach, a method may include illuminating an underside of a platen positioned within a processing chamber, and detecting a perimeter edge of the platen using an imaging device positioned external to the processing chamber, above the platen. The method may further include determining, via a controller, position data for the platen based on the detected perimeter edge of the platen, and positioning a wafer atop the platen based on the position data of the platen, wherein the wafer comprises a positioning notch.

Abstract: A robot calibration method which aligns the coordinate system of a gantry module with the coordinate system of a camera system is disclosed. The method includes using an alignment tool, which allows the operator to place workpieces in locations known by the gantry module. An image is then captured of these workpieces by the camera system. A controller uses the information from the gantry module and the camera system to determine the relationship between the two coordinate systems. It then determines a transformation equation to convert from one coordinate system to the other.

Abstract: A robot calibration method which aligns the coordinate system of a gantry module with the coordinate system of a camera system is disclosed. The method includes using an alignment tool, which allows the operator to place workpieces in locations known by the gantry module. An image is then captured of these workpieces by the camera system. A controller uses the information from the gantry module and the camera system to determine the relationship between the two coordinate systems. It then determines a transformation equation to convert from one coordinate system to the other.

Abstract: An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer.

Abstract: A system and method for handling substrates in a vacuum chamber. The system includes a first robot configured for transferring substrates from a first set of load locks to a preprocessing station, and for transferring substrates from a process platen to the first set of load locks; a second robot configured for transferring substrates from a second set of load locks to the preprocessing station, and for transferring substrates from the process platen to the second set of load locks; and a transfer mechanism for transferring substrates from the preprocessing station to the process platen.

Abstract: A system includes a transfer arm defining a retaining plane, and at least three sensors are disposed on the transfer arm and configured to detect a position of a mask relative to the retaining plane. The at least three sensors may be used to determine if the mask is properly positioned on the transfer arm and to determine if the mask is properly positioned in a masking position. The mask may be used in an ion implanter to shield portions of a workpiece from ion implantation.