Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: A process for removing a plurality of layers of different materials from a substrate having a silicon material base, at least one of said layers being a silicon oxide material and at least one other of said layers comprising a metal and the metal layer being located above the silicon oxide layer. The process includes the steps of treating the substrate with a series of chemical formulations adapted to successively remove the materials of the plurality of layers until the silicon material base is exposed, the silicon oxide layer being removed by treatment with HF, wherein the HF treatment to remove said silicon oxide layer comprises exposing the substrate to:initially, a dilute HF solution of no more than 1.0% concentration;subsequently, a concentrated HF solution of from about 2.5% to about 10% concentration; andfinally, a dilute HF solution of no more than 1.0% concentration.

Abstract: A novel method is disclosed for the removal of organic material, particularly hardened photoresist, from the surface of a substrate. Layers of organic material are removed using at least two treatment cycles, each of which includes the steps of a) applying an acid-containing composition, optionally mixed with an oxidizer, to the substrate surface, and then b) applying water to the substrate surface. The process is characterized by higher temperature spikes, shorter process times and lower chemical usage than is obtained with conventional photoresist stripping methods which do not employ repetitious treatments. The method may be practiced with spray processing equipment.