Abstract: In an example, the present invention provides a method of forming a semiconductor device on a gallium and nitrogen containing material. The method includes providing a substrate member comprising a surface region, the substrate member comprising a gallium and nitrogen bearing material. The method includes causing an implanted species to electrically activate the implant profile while removing one or more crystalline damage from the epitaxial material to change the amorphous state to a single crystalline state, and thereby creating a substantially electrically activated crystalline material.

Abstract: The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.

Abstract: The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.

Abstract: A method and vertical FET device fabricated in GaN or other suitable material. The device has a selective area implant region comprising an activated impurity configured from a bottom portion of a recessed regions, and substantially free from ion implant damage by using an annealing process. A p-type gate region is configured from the selective area implant region, and each of the recessed regions is characterized by a depth configured to physically separate an n+ type source region and the p-type gate region such that a low reverse leakage gate-source p-n junction is achieved. An extended drain region is configured from a portion of an n? type GaN region underlying the recessed regions. An n+ GaN region is formed by epitaxial growth directly overlying the backside region of the GaN substrate and a backside drain contact region configured from the n+ type GaN region overlying the backside region.

Abstract: A method and vertical FET device fabricated in GaN or other suitable material. The device has a selective area implant region comprising an activated impurity configured from a bottom portion of a recessed regions, and substantially free from ion implant damage by using an annealing process. A gate region is configured from the selective area implant region, and each of the recessed regions is characterized by a depth configured to physically separate an n+ type source region and the p-type gate region such that a low reverse leakage gate-source p-n junction is achieved. An extended drain region is configured from a portion of an n? type GaN region underlying the recessed regions. An n+ GaN region is formed by epitaxial growth directly overlying the backside region of the GaN substrate and a backside drain contact region configured from the n+ type GaN region overlying the backside region.

Abstract: The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.

Abstract: A method and vertical FET device fabricated in GaN or other suitable material. The device has a selective area implant region comprising an activated impurity configured from a bottom portion of a recessed regions, and substantially free from ion implant damage by using an annealing process. A p-type gate region is configured from the selective area implant region, and each of the recessed regions is characterized by a depth configured to physically separate an n+ type source region and the p-type gate region such that a low reverse leakage gate-source p-n junction is achieved. An extended drain region is configured from a portion of an n? type GaN region underlying the recessed regions. An n+ GaN region is formed by epitaxial growth directly overlying the backside region of the GaN substrate and a backside drain contact region configured from the n+ type GaN region overlying the backside region.

Abstract: A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.

Abstract: A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.

Abstract: A gated III-V semiconductor structure and a method for fabricating the gated III-V semiconductor structure includes a threshold modifying dopant region within a III-V semiconductor barrier layer at the base of an aperture through a passivation layer that otherwise passivates the III-V semiconductor barrier layer. The passivation layer, which may comprise an aluminum-silicon nitride material, has particular bandgap and permittivity properties that provide for enhanced performance of a III-V semiconductor device that derives from the III-V semiconductor structure absent a field plate. The threshold modifying dopant region provides the possibility for forming both an enhancement mode gated III-V semiconductor structure and a depletion mode III-V semiconductor structure on the same substrate.

Abstract: A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10^-11 to about 8×10^-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.

Abstract: A gated III-V semiconductor structure and a method for fabricating the gated III-V semiconductor structure includes a threshold modifying dopant region within a III-V semiconductor barrier layer at the base of an aperture through a passivation layer that otherwise passivates the III-V semiconductor barrier layer. The passivation layer, which may comprise an aluminum-silicon nitride material, has particular bandgap and permittivity properties that provide for enhanced performance of a III-V semiconductor device that derives from the III-V semiconductor structure absent a field plate. The threshold modifying dopant region provides the possibility for forming both an enhancement mode gated III-V semiconductor structure and a depletion mode III-V semiconductor structure on the same substrate.

Abstract: A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10?-11 to about 8×10?-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.

Abstract: A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.

Abstract: A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.

Abstract: A single step process for nucleation and subsequent epitaxial growth on a lattice mismatched substrate is achieved by pre-treating the substrate surface with at least one group III reactant or at least one group II reactant prior to the introduction of a group V reactant or a group VI reactant. The group III reactant or the group II reactant is introduced into a growth chamber at an elevated growth temperature to wet a substrate surface prior to any actual crystal growth. Once the pre-treatment of the surface is complete, a group V reactant or a group VI reactant is introduced to the growth chamber to commence the deposition of a nucleation layer. A buffer layer is then grown on the nucleation layer providing a surface upon which the epitaxial layer is grown preferably without changing the temperature within the chamber.

Abstract: An epitaxial deposition process produces epitaxial lateral overgrowth (ELO) of nitride based materials directly a patterned substrate (10). The substrate (10) is preferably formed from SiC or sapphire, and is patterned with a mask (12), preferably formed of silicon nitride, having a plurality of openings (13) formed therein. A nucleation layer (14), preferably formed of AlGaN, is grown at a high reactor temperature of 700-1100 degrees C., which wets the exposed substrate surface, without significant nucleation on the mask (12). This eliminates the need for regrowth while producing smooth growth surfaces in the window openings (13) as well as over the mask (12). Subsequent deposition of a nitride based material layer (16), preferably GaN, results in a relatively defect free planar surfaced material grown laterally over the mask (12).

Abstract: A process for synthesizing wide band gap materials, specifically, GaN, employs plasma-assisted and thermal nitridation with NH.sub.3 to convert GaAs to GaN. Thermal assisted nitridation with NH.sub.3 can be employed for forming layers of substantial thickness (on the order of 1 micron) of cubic and hexagonal GaN on a GaAs substrate. Plasma-assisted nitridation of NH.sub.3 results in formation of predominantly cubic GaN, a form particularly useful in optoelectronic devices. Preferably, very thin GaAs membranes are employed to permit formation thereon of GaN layers of any desired thickness without concern for critical thickness constraints. The thin membranes are preferably formed either with an epitaxial bonding technique, or by undercut etching.

Abstract: Single quantum well short wavelength AlGaInP GRIN-SCH semiconductor lasers having high output power in the 660-680 nm range were prepared by organometallic vapor phase epitaxy. The laser active region preferably consists of a 100 .ANG. single Ga.sub.0.5 In.sub.0.5 P quantum well and 1600 .ANG. graded index regions on both sides of the well. The graded index regions were produced by lattice-matched graded composition (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P quaternary alloys where y has a value from about 0.2 to 0.6. This structure reduces the broad-area threshold current compared to a double heterostructure laser to give pulsed thresholds as low as 1050 A/cm.sup.2. Total pulsed power of 1.4 W at 658 nm is available from an 80 .mu.m.times.300 .mu.m mesa-stripe laser. A differential quantum efficiency of up to about .about.56% was measured. Indicated uses include diode-pumped solid state laser applications and as a light source in optical disk drives and holographic scanners.

Abstract: A method of removing oxygen and water vapor and other oxygen bearing gas species from reactant gases comprising the use of an appropriate solution containing an active gettering metal, selected from the group of aluminum, magnesium, calcium and lithium in liquid phase through a moderate temperature range, including room temperature and above as an oxygen gettering step, through the formation of an oxide of said metal wherein the said metal becomes continuously available for oxidation by exposing the said unreacted metal to the gas by bubbling the reactant gas through a ternary melt of gallium-indium and the said metal in a nonreactive container and maintaining in solid phase an excess of the active gettering method so that the capacity for removing the oxygen and water vapor and other oxygen bearing gas species may be extended by the active metal going into solution in the melt from the solid as the metal oxide is formed and goes out of solution.