Abstract: An apparatus capable of simultaneous focusing, positioning, and scanning of an ion beam is described. The apparatus uses metallic elements to form the sides of an open-ended substantially box-shaped structure. Application of AC and DC currents to the four corners of the structure create AC and DC fields within the structure that deflect an ion beam so as to perform the functions of positioning, focusing, and scanning. The center of focusing of the ion beam is placed closer to the center of scanning of the ion beam than in conventional ion beam deflection systems. As a result, the tendency of space charge beam blow-up during scanning is greatly diminished. By combining the functions of positioning, focusing, and scanning in one deflection element, the length of an ion beam deflection system is reduced, and the current capability is greatly increased.

Abstract: A method and apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm.

Abstract: An apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm.

Abstract: In an apparatus for bombarding a target with a beam of ions, an expedient is provided for maintaining the beam line and target under vacuum of 2.times.10.sup.-4 Torr. or lower pressures. The apparatus includes a mass separator, e.g., analyzing magnet adapted to provide selected ions which are to be formed into the desired beam with a trajectory along a selected axis: the target is positioned along this selected axis; the apparatus further includes: a housing extending from the mass separator to the target to enclose the axis and target within a chamber, beam defining means within said chamber traversing said axis and impeding the flow of gas through said chamber, said defining means having a beam defining opening therein at said axis to permit the passage of a selected portion of the beam toward the target, and vacuum drawing means connected to said chamber through an opening in said housing crossing said beam defining means whereby said drawing means removes gas from both sides of said beam defining means.