Patents by Inventor James Rominger

James Rominger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming a plurality of capacitors
    Patent number: 7445990
    Abstract: A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: November 4, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Brett W. Busch, Fred D. Fishburn, James Rominger
  • Methods of forming a plurality of circuit components and methods of forming a plurality of structures suspended elevationally above a substrate
    Patent number: 7413952
    Abstract: A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material.
    Type: Grant
    Filed: December 26, 2006
    Date of Patent: August 19, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Brett W. Busch, Fred D. Fishburn, James Rominger
  • Methods of forming a plurality of circuit components and methods of forming a plurality of structures suspended elevationally above a substrate
    Publication number: 20070105303
    Abstract: A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material.
    Type: Application
    Filed: December 26, 2006
    Publication date: May 10, 2007
    Inventors: Brett Busch, Fred Fishburn, James Rominger
  • Methods of forming a plurality of capacitors
    Patent number: 7202127
    Abstract: A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: April 10, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Brett W. Busch, Fred D. Fishburn, James Rominger
  • Methods of forming a plurality of capacitors
    Publication number: 20060148190
    Abstract: A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material.
    Type: Application
    Filed: February 24, 2006
    Publication date: July 6, 2006
    Inventors: Brett Busch, Fred Fishburn, James Rominger
  • Methods of forming a plurality of capacitors
    Publication number: 20060051918
    Abstract: A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material.
    Type: Application
    Filed: August 27, 2004
    Publication date: March 9, 2006
    Inventors: Brett Busch, Fred Fishburn, James Rominger