Patents by Inventor James Rondinelli

James Rondinelli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160155941
    Abstract: A vertical charge ordered transistor is disclosed. A thin charge ordered layer is employed as a tunnel barrier between two electrodes. A gate-induced accumulation of charge destabilizes the charge ordered state around the circumference of the device, opening up a parallel ohmic conduction channel, which leads to an exponential increase in source-drain current. VCOT devices have the potential to exhibit very large on/off ratios, low off-state currents, and sub-threshold slopes below 60 mV/dec.
    Type: Application
    Filed: July 31, 2015
    Publication date: June 2, 2016
    Applicants: THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA, DREXEL UNIVERSITY
    Inventors: Steven May, Jonathan Spanier, James Rondinelli, Mitra Taheri, Robert Charles Devlin, Andrew Marshall Rappe
  • Patent number: 9099384
    Abstract: A vertical charge ordered transistor is disclosed. A thin charge ordered layer is employed as a tunnel barrier between two electrodes. A gate-induced accumulation of charge destabilizes the charge ordered state around the circumference of the device, opening up a parallel ohmic conduction channel, which leads to an exponential increase in source-drain current. VCOT devices have the potential to exhibit very large on/off ratios, low off-state currents, and sub-threshold slopes below 60 mV/dec.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: August 4, 2015
    Assignees: Drexel University, The Trustees of the University of Pennsylvania
    Inventors: Steven May, Jonathan Spanier, James Rondinelli, Mitra Taheri, Robert Charles Devlin, Andrew Marshall Rappe
  • Publication number: 20150001537
    Abstract: A vertical charge ordered transistor is disclosed. A thin charge ordered layer is employed as a tunnel barrier between two electrodes. A gate-induced accumulation of charge destabilizes the charge ordered state around the circumference of the device, opening up a parallel ohmic conduction channel, which leads to an exponential increase in source-drain current. VCOT devices have the potential to exhibit very large on/off ratios, low off-state currents, and sub-threshold slopes below 60 mV/dec.
    Type: Application
    Filed: February 15, 2013
    Publication date: January 1, 2015
    Applicants: Drexel University, The Trustees of the University of Pennsylvania
    Inventors: Steven May, Jonathan Spanier, James Rondinelli, Mitra Taheri, Robert Charles Devlin, Andrew Marshall Rappe