Abstract: A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. Each at least partially unmelted region adjoins adjacent melted regions. After irradiation by the first excimer laser pulse, the melted regions of the metal layer are pemitted to resolidify. During resolidification, the at least partially unmelted regions seed growth of grains in adjoining melted regions to produce larger grains.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: A process and system for processing a silicon thin film on a sample are provided. In particular, an irradiation beam generator is controlled to emit irradiation beam pulses at a predetermined repetition rate. These irradiation beam pulses are then separated into a first set of beam pulses and a second set of beam pulses. The first set of beam pulses are caused to irradiate through a mask to produce a plurality of beamlets. The second set of beam pulses and the beamlets are caused to impinge and irradiate at least one section of the silicon thin film. When the second set of beam pulses and the beamlets simultaneously irradiate the section of the silicon thin film, this combination of the beamlets and second set of beam pulses provides a combined intensity which is sufficient to melt the section of the silicon thin film throughout an entire thickness of the section.

Abstract: A method and system for processing a silicon thin film sample on a substrate. The substrate has a surface portion that does not seed crystal growth in the silicon thin film. The film sample has a first edge and a second edge. An irradiation beam generator is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define a first plurality of beamlets and a second plurality of beamlets, the first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to melt irradiated portions of the film sample throughout their entire thickness. The film sample is continuously scanned, at a constant predetermined speed, so that a successive impingement of the first and second beamlets of the irradiation beam pulses occurs in a scanning direction on the film sample between the first edge and the second edge.

Abstract: Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed.

Abstract: A process and system for processing a silicon thin film on a sample are provided. In particular, an irradiation beam generator is controlled to emit irradiation beam pulses at a predetermined repetition rate. These irradiation beam pulses are then separated into a first set of beam pulses and a second set of beam pulses. The first set of beam pulses are caused to irradiate through a mask to produce a plurality of beamlets. The second set of beam pulses and the beamlets are caused to impinge and irradiate at least one section of the silicon thin film. When the second set of beam pulses and the beamlets simultaneously irradiate the section of the silicon thin film, this combination of the beamlets and second set of beam pulses provides a combined intensity which is sufficient to melt the section of the silicon thin film throughout an entire thickness of the section.

Abstract: A method and system for processing a silicon thin film sample on a substrate. The substrate has a surface portion that does not seed crystal growth in the silicon thin film. The film sample has a first edge and a second edge. An irradiation beam generator is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each of the irradiation beam pulses is masked to define a first plurality of beamlets and a second plurality of beamlets, the first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to melt irradiated portions of the film sample throughout their entire thickness. The film sample is continuously scanned, at a constant predetermined speed, so that a successive impingement of the first and second beamlets of the irradiation beam pulses occurs in a scanning direction on the film sample between the first edge and the second edge.

Abstract: System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: Substrates having modified effective thermal conductivity for use in the sequential lateral solidification process are disclosed. In one arrangement, a substrate includes a glass base layer, a low conductivity layer formed adjacent to a surface of the base layer, a high conductivity layer formed adjacent to the low conductivity layer, a silicon compound layer formed adjacent to the high conductivity layer, and a silicon layer formed on the silicon compound layer. In an alternative arrangement, the substrate includes an internal subsurface melting layer which will act as a heat reservoir during subsequent sequential lateral solidification processing.

Abstract: System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: A method and system for processing an amorphous silicon thin film sample to produce a large grained, grain boundary-controlled silicon thin film. The film sample includes a first edge and a second edge. In particular, using this method and system, an excimer laser is used to provide a pulsed laser beam, and the pulse laser beam is masked to generate patterned beamlets, each of the patterned beamlets having an intensity which is sufficient to melt the film sample. The film sample is continuously scanned at a first constant predetermined speed along a first path between the first edge and the second edge with the patterned beamlets. In addition, the film sample is continuously scanned at a second constant predetermined speed along a second path between the first edge and the second edge with the patterned beamlets.

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. Each at least partially unmelted region adjoins adjacent melted regions. After irradiation by the first excimer laser pulse, the melted regions of the metal layer are pemitted to resolidify. During resolidification, the at least partially unmelted regions seed growth of grains in adjoining melted regions to produce larger grains.

Abstract: A method and system for processing an amorphous silicon thin film sample to produce a large grained, grain boundary-controlled silicon thin film. The film sample includes a first edge and a second edge. In particular, using this method and system, an excimer laser is used to provide a pulsed laser beam, and the pulse laser beam is masked to generate patterned beamlets, each of the patterned beamlets having an intensity which is sufficient to melt the film sample. The film sample is continuously scanned at a first constant predetermined speed along a first path between the first edge and the second edge with the patterned beamlets. In addition, the film sample is continuously scanned at a second constant predetermined speed along a second path between the first edge and the second edge with the patterned beamlets.

Abstract: Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has regular, quasi-regular or single-crystal structure. Such a structure is made by a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness. The molten material then solidifies laterally from a seed area of the film. The semiconductor devices can be included as pixel controllers and drivers in liquid-crystal display devices, and in image sensors, static random-access memories (SRAM), silicon-on-insulator (SOI) devices, and three-dimensional integrated circuit devices.

Abstract: A method and system for processing an amorphous silicon thin film sample to produce a large grained, grain boundary-controlled silicon thin film. The film sample includes a first edge and a second edge. In particular, using this method and system, an excimer laser is used to provide a pulsed laser beam, and the pulse laser beam is masked to generate patterned beamlets, each of the patterned beamlets having an intensity which is sufficient to melt the film sample. The film sample is continuously scanned at a first constant predetermined speed along a first path between the first edge and the second edge with the patterned beamlets. In addition, the film sample is continuously scanned at a second constant predetermined speed along a second path between the first edge and the second edge with the patterned beamlets.

Abstract: Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has regular, quasi-regular or single-crystal structure. Such a structure is made by a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness. The molten material then solidifies laterally from a seed area of the film. The semiconductor devices can be included as pixel controllers and drivers in liquid-crystal display devices, and in image sensors, static random-access memories (SRAM), silicon-on-insulator (SOI) devices, and three-dimensional integrated circuit devices.