Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for the selection, provision and display of one or more digital components during display of content. Methods can include identifying a plurality of digital components that can be presented on the client device. A maximum number of digital components that can be presented in a slot of a content and the time duration of the slot is determined. For each digital component a score is generated based on the duration, a position requirement and the number of times the digital component is available for provision within the slot is generated. A first set of digital component is selected based on the scores and provided to the client device.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for the selection, provision and display of one or more digital components during display of content. Methods can include identifying a plurality of digital components that can be presented on the client device. A maximum number of digital components that can be presented in a slot of a content and the time duration of the slot is determined. For each digital component a score is generated based on the duration, position requirement and the number of times the digital component is available for provision within the slot is generated. A first set of digital component is selected based on the scores and provided to the client device.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for the selection, provision and display of one or more digital components during display of content. Methods can include identifying a plurality of digital components that can be presented on the client device. A maximum number of digital components that can be presented in a slot of a content and the time duration of the slot is determined. For each digital component a score is generated based on the duration, a position requirement and the number of times the digital component is available for provision within the slot is generated. A first set of digital component is selected based on the scores and provided to the client device.

Abstract: A novel Flame Temperature Analyzer (FTA) method and apparatus for measuring combustible gas concentration and oxygen content in a sample gas includes supplying a mixture of oxidant and fuel to a sensing flame and measuring the temperature of the flame as the sample is added to the combustion chamber.

Abstract: A cryogenic enhanced mechanical freezer system and method are provided. The disclosed system includes a mechanical freezer compartment adapted for freezing food products on a conveyor, a cryogen injection system adapted to directly inject cryogen into a shrouded zone proximate the conveyor in the mechanical freezer compartment, an exhaust system adapted to rapidly evacuate cryogen vapors from the freezer compartment; and a freezer control system adapted to operatively control the exhaust system and cryogen injection system in response to selected inputs so as to not adversely affect the mechanical refrigeration capacity associated with the mechanical freezer. The selected inputs may include user inputs as well as inputs received from one or more temperature sensors disposed in the freezer compartment and a gas analyzer adapted to monitor concentrations of selected gases within the freezer compartment.

Abstract: A cryogenic enhanced mechanical freezer system and method are provided. The disclosed system includes a mechanical freezer compartment adapted for freezing food products, a cryogen injection system adapted to directly inject cryogen into the mechanical freezer compartment, an exhaust system adapted to rapidly evacuate cryogen vapors from the freezer compartment; and a freezer control system adapted to operatively control the exhaust system and cryogen injection system in response to selected inputs. The selected inputs may include user inputs as well as inputs received from a temperature sensor disposed in the freezer compartment and a gas analyzer adapted to monitor concentrations of selected gases within the freezer compartment. Access to the freezer compartment is prevented during cryogen injection and when the atmosphere in the freezer compartment is not safe as determined by the gas analyzer.

Abstract: The present invention is directed to a dry cleansing cloth that comprises at least one personal care composition imparted to the cloth, wherein the composition acts as a visual indicator of the compositions depletion with each use, eventually signaling the consumer for the need of a replacement cloth. Accordingly, the cloth of the present invention may be any suitable limited use substrate, including wovens, nonwovens, films, and combinations thereof. Preferably, the limited use cloth comprises a nonwoven substrate, wherein the nonwoven substrates may include, but are not limited to airlaid fabrics, wetlaid fabrics, spunlace fabrics, spunbond fabrics, meltblown fabrics, coform fabrics, entangled spunbond fabrics, and combinations thereof.

Abstract: A semiconductor process and apparatus fabricate a metal gate electrode by forming a first conductive layer (22) over a gate dielectric layer (11), forming a transition layer (32) over the first conductive layer using an atomic layer deposition process in which an amorphizing material is increasingly added as the transition layer is formed, forming a capping conductive layer (44) over the transition layer, and then selectively etching the capping conductive layer, transition layer, and first conductive layer, resulting in the formation of an etched gate stack (52). By forming the transition layer (32) with an atomic layer deposition process in which the amorphizing material (such as silicon, carbon, or nitrogen) is increasingly added, the transition layer (32) is constructed having a lower region (e.g., 31, 33) with a polycrystalline structure and an upper region (e.g., 37, 39) with an amorphous structure that blocks silicon diffusion.

Abstract: A semiconductor device includes a substrate, a multilayered assembly of high k dielectric materials formed on the substrate, and a first conducting material formed on the upper layer of the assembly of high k dielectric materials. The multilayered high k dielectric assembly includes a lower layer, an upper layer, and a diffusion barrier layer formed between the lower and upper dielectric layers. The diffusion barrier layer has a greater affinity for oxygen than the upper and lower layers. The first conducting layer includes a conducting compound of at least a metal element and oxygen.

Abstract: A portable compact sauna wherein a user's body is warmed to sweating primarily by direct absorption of infrared radiation. Broad infrared radiation emitters or sources are placed around the inside of a narrow cabinet so as to be in close proximity to various parts of a seated user. Fins spaced apart less than finger-width on the emitters protect the user from contact with elevated temperatures in the emitters. The emitters, which lend themselves to easy cleaning, are heated by electric infrared heaters having a unique design which eliminates extremely-low-frequency (ELF) electromagnetic field (EMF) normally generated by AC energized electrical heater elements, to provide low extremely-low frequency EMF saunas able to utilize conventional-commercial electrical-energy sources. The emitters protect the heaters. Power wires for the heaters are arranged for low ELF EMF emission, too.

Abstract: A portable compact sauna wherein a user's body is warmed to sweating primarily by direct absorption of infrared radiation. Broad infrared radiation emitters or sources are placed around the inside of a narrow cabinet so as to be in close proximity to various parts of a seated user. Fins spaced apart less than finger-width on the emitters protect the user from contact with elevated temperatures in the emitters. The emitters, which lend themselves to easy cleaning, are heated by electric infrared heaters having a unique design which eliminates extremely-low-frequency (ELF) electromagnetic field (ELF) normally generated by AC energized electrical heater elements, to provide low extremely-low frequency EMF saunas able to utilize conventional-commercial electrical-energy sources. The emitters protect the heaters. Power wires for the heaters are arranged for low ELF EMF emission, too.

Abstract: The present invention is directed to a modular die unit comprising a plurality of individually shaped plates wherein the shaped plates are stacked in face to face juxtaposition, and when placed into such a juxtaposition exhibit useful polymer forming attributes heretofore unattainable by prior art practices. Single die plates are formed such that the plates exhibit a finite geometric relationship, which in turn provides resistance to flexural deformation of the individually shaped die plates and conversely, improved resistance to variability of the modular die unit and enhanced and predictable formation characteristics of the polymer material formed therewith. Each of said single die plates within the stack forming the modular die unit exhibit an x-direction, a y-direction, and a z-direction, wherein any one of said single die plates exhibit in said x-direction and y-direction to have at least a 50% planar continuity of the total planar continuity.

Abstract: The present invention is directed to a nonwoven fabric, and specifically to an engineered nonwoven fabric imparted with a discontinuous, irregular, three-dimensional pattern, which results in a sufficiently resilient material that exhibits a uniform multi-directional cleaning performance imminently suitable for numerous applications including the treatment, cleaning and/or cleansing of surfaces.

Abstract: A method for forming a semiconductor device (100) includes a semiconductor substrate (102) having a first region (104), forming a gate dielectric (108) over the first region, forming a conductive metal oxide (110) over the gate dielectric, forming an oxidation resistant barrier layer (111) over the conductive metal oxide, and forming a capping layer over the oxidation resistant barrier layer. In one embodiment, the conductive metal oxide is IrO2, MoO2, and RuO2, and the oxidation resistant barrier layer includes TiN.

Abstract: A metal-containing semiconductor layer having a high dielectric constant is formed with a method that avoids inclusion of contaminant elements that reduce dielectric constant of metals. The metal-containing semiconductor layer is formed overlying a substrate in a chamber. A precursor is introduced to deposit at least a portion of the metal-containing semiconductor layer. The precursor contains one or more elements that, if allowed to deposit in the metal-containing layer, would become impurity elements. A reactant gas is used to purify the metal-containing layer by removing impurity elements from the metal-containing layer which were introduced into the chamber by the precursor.

Abstract: A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semiconductor substrate but not completely covering the exposed surface of the semiconductor substrate. The one or more metals enhance nucleation for subsequent material growth. A metal-containing layer is formed on the exposed surface of the semiconductor substrate that has been treated. The treatment of the exposed surface of the semiconductor substrate assists the metal-containing layer to coalesce. In one embodiment, treatment of the exposed surface to enhance nucleation may be performed by spin-coating, atomic layer deposition (ALD), physical layer deposition (PVD), electroplating, or electroless plating.

Abstract: The present invention is directed to a nonwoven fabric, and specifically to an engineered nonwoven fabric imparted with a discontinuous, irregular, three-dimensional pattern, which results in a sufficiently resilient material that exhibits a uniform multi-directional cleaning performance imminently suitable for numerous applications including the treatment, cleaning and/or cleansing of surfaces.

Abstract: In one embodiment, metal boride (MBx), metal carbide (MCx), metal carbo-nitrides (MCxNy), metal boro-carbide (MBxCy), metal boro-nitride (MBxNy) or metal boro-carbo-nitride (MBxCyNz), wherein the metal is a transition metal (Group III-XII of the periodic chart) may be suitable as NMOS gate electrode materials. Such materials, such as TaC and LaB6, can be formed to have work functions that are within approximately 4-4.3 eV, which is desirable for NMOS transistors. In addition, the amount of carbon or nitrogen can be adjusting the amount of carbon or nitrogen in the precursor to achieve a predetermined metal work function.

Abstract: The present invention is directed to a modular die unit comprising a plurality of individually shaped plates wherein the shaped plates are stacked in face to face juxtaposition, and when placed into such a juxtaposition exhibit useful polymer forming attributes heretofore unattainable by prior art practices. Single die plates are formed such that the plates exhibit a finite geometric relationship, which in turn provides resistance to flexural deformation of the individually shaped die plates and conversely, improved resistance to variability of the modular die unit and enhanced and predictable formation characteristics of the polymer material formed therewith. Each of said single die plates within the stack forming the modular die unit exhibit an x-direction, a y-direction, and a z-direction, wherein any one of said single die plates exhibit in said x-direction and y-direction to have at least a 50% planar continuity of the total planar continuity.

Abstract: The present invention is directed to a method of making three-dimensionally imaged films, and more specifically to a method of making an imaged film by directly extruding the polymeric melt onto a three-dimensional surface. The present invention is further directed to a method of making three-dimensionally imaged nonwoven fabric comprising at least one layer of continuously extruded nonwoven filaments that are directly deposited onto the foraminous surface of a three-dimensional image transfer device.